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PSMN038-100K,518 PDF预览

PSMN038-100K,518

更新时间: 2024-09-08 14:44:15
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
13页 102K
描述
N-channel TrenchMOS SiliconMAX standard level FET SOIC 8-Pin

PSMN038-100K,518 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:PLASTIC, MS-012, SOP-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.16配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):6.3 A
最大漏极电流 (ID):6.3 A最大漏源导通电阻:0.038 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
湿度敏感等级:2元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3.5 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:NICKEL PALLADIUM GOLD
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PSMN038-100K,518 数据手册

 浏览型号PSMN038-100K,518的Datasheet PDF文件第2页浏览型号PSMN038-100K,518的Datasheet PDF文件第3页浏览型号PSMN038-100K,518的Datasheet PDF文件第4页浏览型号PSMN038-100K,518的Datasheet PDF文件第5页浏览型号PSMN038-100K,518的Datasheet PDF文件第6页浏览型号PSMN038-100K,518的Datasheet PDF文件第7页 
PSMN038-100K  
N-channel enhancement mode field-effect transistor  
Rev. 01 — 16 January 2001  
Product specification  
1. Description  
SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve  
the lowest possible on-state resistance in a SOT96-1 (SO8) package.  
Product availability:  
PSMN038-100K in SOT96-1 (SO8).  
2. Features  
Very low on-state resistance  
Fast switching  
TrenchMOS™ technology.  
3. Applications  
DC to DC convertor  
Computer motherboards  
Switch mode power supplies.  
c
c
4. Pinning information  
Table 1: Pinning - SOT96-1, simplified outline and symbol  
Pin  
Description  
source (s)  
gate (g)  
Simplified outline  
Symbol  
1,2,3  
4
d
s
8
5
5,6,7,8  
drain (d)  
g
1
4
MBB076  
Top view  
MBK187  
SOT96-1 (SO8)  
1. SiliconMAX is a trademark of Royal Philips Electronics.  
2. TrenchMOS is a trademark of Royal Philips Electronics.  
 
 
 

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