生命周期: | Transferred | 零件包装代码: | SOIC |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.18 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 6.3 A | 最大漏源导通电阻: | 0.038 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | MS-012AA |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e4 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | NICKEL PALLADIUM GOLD |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN038-100YL | NEXPERIA |
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N-channel 100 V 37.5 mΩ logic level MOSFET in |
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PSMN038-100YLX | NXP |
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N-channel 100 V 37.5 mΩ logic level MOSFET in |
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PSMN039-100YS | NXP |
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N-channel LFPAK 100 V 39.5 mΩ standard level |
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PSMN039-100YS | NEXPERIA |
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N-channel LFPAK 100 V 39.5 mΩ standard level |
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PSMN040-100MSE | NXP |
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N-channel 100 V 36.6 m standard level MOSFET in LFPAK33 designed specifically for high pow |
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PSMN040-100MSE | NEXPERIA |
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N-channel 100 V 36.6 mΩ standard level MOSFET |
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PSMN040-100MSEX | NXP |
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PSMN040-100MSE - N-channel 100 V 36.6 mΩ stan |
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PSMN040-200W | NXP |
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N-channel TrenchMOS transistor |
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PSMN040-200W,127 | NXP |
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PSMN040-200W - N-channel TrenchMOS SiliconMAX standard level FET@en-us TO-247 3-Pin |
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PSMN041-100MSE | NEXPERIA |
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N-channel 100 V 42 mOhm standard level ASFET with enhanced SOA in LFPAK33 package. Designe |
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