是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G4 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
雪崩能效等级(Eas): | 54 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 30 A | 最大漏源导通电阻: | 0.0366 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 121 A | 参考标准: | IEC-60134 |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN040-100MSEX | NXP |
获取价格 |
PSMN040-100MSE - N-channel 100 V 36.6 mΩ stan |
![]() |
PSMN040-200W | NXP |
获取价格 |
N-channel TrenchMOS transistor |
![]() |
PSMN040-200W,127 | NXP |
获取价格 |
PSMN040-200W - N-channel TrenchMOS SiliconMAX standard level FET@en-us TO-247 3-Pin |
![]() |
PSMN041-100MSE | NEXPERIA |
获取价格 |
N-channel 100 V 42 mOhm standard level ASFET with enhanced SOA in LFPAK33 package. Designe |
![]() |
PSMN041-80YL | NXP |
获取价格 |
25A, 80V, 0.041ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235, PLASTIC, POWER, SOP-8, LFPAK56-4 |
![]() |
PSMN041-80YL | NEXPERIA |
获取价格 |
N-channel 80 V 41 mΩ logic level MOSFET in LF |
![]() |
PSMN041-80YLX | NXP |
获取价格 |
N-channel 80 V 41 mΩ logic level MOSFET in LF |
![]() |
PSMN045-100HL | NEXPERIA |
获取价格 |
N-channel 100 V, 45 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technologyProduct |
![]() |
PSMN045-80YS | NXP |
获取价格 |
N-channel LFPAK 80 V 45 mΩ standard level MOS |
![]() |
PSMN045-80YS | NEXPERIA |
获取价格 |
N-channel LFPAK 80 V 45 mΩ standard level MOS |
![]() |