Datasheet > 晶体管 > 功率场效应晶体管> PSMN038-100YLX

PSMN038-100YLX

更新时间： 2024-09-08 13:12:31

品牌	Logo	应用领域
恩智浦 - NXP		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
12页	380K
描述
N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 SOIC 4-Pin

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中文翻译

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技术参数
数据手册

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PSMN038-100YLX 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SOIC	针数：	4
Reach Compliance Code：	compliant	风险等级：	5.75
Is Samacsys：	N	Base Number Matches：	1

PSMN038-100YLX 数据手册

PSMN038-100K

N-channel TrenchMOS SiliconMAX standard level FET

Rev. 02 — 25 November 2009

Product data sheet

1. Product profile

1.1 General description

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in

a plastic package using TrenchMOS technology. This product is designed and qualified for

use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Low conduction losses due to low

Suitable for high frequency

applications due to fast switching

characteristics

on-state resistance

1.3 Applications

Computer motherboards

DC-to-DC convertors

Switched-mode power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 150 °C

Min

Typ

Max Unit

V_DS

I_D

100

6.3

drain current

T_sp= 80 °C;

see Figure 1 and 3

P_tot

total power

dissipation

T_sp= 80 °C;

see Figure 2

3.5

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 6.3 A;

V_DS= 50 V; T_j= 25 °C;

see Figure 11

21.5 nC

Static characteristics

R_DSon

drain-source

on-state resistance

V_GS= 10 V; I_D= 5.2 A;

T_j= 25 °C;

mΩ

see Figure 9 and 10

12 3 4 5 6 7...12

中文翻译

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