Datasheet > IXTT110N10P

IXTT110N10P

更新时间： 2024-11-04 21:54:47

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	580K
描述
N-Channel Enhancement Mode

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中文翻译

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数据手册
替代型号

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IXTT110N10P 数据手册

Advance Technical Information

IXTQ 110N10P

IXTT 110N10P

V_DSS= 100

I_D25= 110

R_DS(on)= 15 mΩ

PolarHT^TM

Power MOSFET

N-Channel Enhancement Mode

TO-3P(IXTQ)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

= 25°C to 175°C

100

T^J_J= 25°C to 175°C; R_GS= 1 MΩ

V_GSM

I_D25

I_D(RMS)

I_DM

= 25°C

110

250

E^Cxternal lead current limit

(TAB)

T_C= 25°C, pulse width limited by T_JM

I_AR

T_C= 25°C

E_AR

E_AS

T_C= 25°C

TO-268 (IXTT)

1.0

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 4 Ω

V/ns

D (TAB)

P_D

T_C= 25°C

480

G = Gate

D = Drain

T_J

T_JM

T_stg

-55 ... +175

175

°C

S = Source

TAB = Drain

-55 ... +150

Features

T_L

1.6 mm (0.062 in.) from case for 10 s

300

°C

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

M_d

Mounting torque

(TO-3P)

1.13/10 Nm/lb.in.

Weight

TO-3P

TO-268

5.5

5.0

Advantages

Symbol

TestConditions

Characteristic Values

Easy to mount

Space savings

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250µA

V_GS= 20 V_DC, V_DS= 0

100

High power density

2.5

5.0

100

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

µA

T_J= 150°C

PolarHT^TMDMOStransistors

utilize proprietary designs and

process. US patent is pending.

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

15 mΩ

DS99132(05/04)

12 3 4 5

中文翻译

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IXTT110N10P 替代型号

型号	品牌	替代类型	描述	数据表
IXFV110N10P	IXYS	类似代替	PolarHT HiPerFET Power MOSFET
IXTQ110N10P	IXYS	类似代替	N-Channel Enhancement Mode
IXFH110N10P	IXYS	功能相似	PolarHT HiPerFET Power MOSFET

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