Datasheet > IXTT1N450HV

IXTT1N450HV

更新时间： 2024-11-21 12:02:47

品牌	Logo	应用领域
IXYS		高压
页数	文件大小	规格书
5页	156K
描述
High Voltage Power MOSFET

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中文翻译

获取价格

技术参数
数据手册

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IXTT1N450HV 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.69	配置：	Single
最大漏极电流 (Abs) (ID)：	1 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	湿度敏感等级：	1
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	520 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Matte Tin (Sn)	Base Number Matches：	1

IXTT1N450HV 数据手册

Preliminary Technical Information

High Voltage

Power MOSFET

V_DSS

I_D25

= 4500V

= 1A

IXTT1N450HV

R_DS(on)≤ 85Ω

N-Channel Enhancement Mode

TO-268 (IXTT)

Symbol

V_DSS

Test Conditions

Maximum Ratings

D (Tab)

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

4500

V_DGR

G = Gate

= Drain

S = Source

Tab = Drain

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

P_D

T_C= 25°C

520

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

Features

High Blocking Voltage

High Voltage Package

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Weight

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ. Max.

High Voltage Power Supplies

Capacitor Discharge Applications

Pulse Circuits

Laser and X-Ray Generation Systems

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 250μA

V_GS= ±20V, V_DS= 0V

3.5

6.0

±100 nA

I_DSS

V_DS= 3.6kV, V_GS= 0V

V_DS= 4.5kV

V_DS= 3.6kV

10 μA

50 μA

μA

T_J= 100°C

R_DS(on)

V_GS= 10V, I_D= 50mA, Note 1

DS100500A(04/13)

12 3 4 5

中文翻译

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