生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.69 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 1 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 520 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTT20N50D | IXYS |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT20N50D | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT20P50P | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, | |
IXTT20P50P | IXYS |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 500V, 0.45ohm, 1-Element, P-Channel, Silicon, Met | |
IXTT21N50Q | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT21N50Q | IXYS |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT22N60P | IXYS |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT240N15X4HV | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, | |
IXTT24N50Q | IXYS |
获取价格 |
Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT24N50Q | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met |