Datasheet > IXTT30N60L2

IXTT30N60L2

更新时间： 2024-02-23 09:10:50

品牌	Logo	应用领域
力特 - LITTELFUSE		开关
页数	文件大小	规格书
6页	169K
描述
这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用，具有低热阻、高功率密度和正向偏压安全工作区(RBSOA)。当功率MOSFET以线性模式工作时，相对于传统的开关模式具有相当高的热应

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXTT30N60L2 数据手册

Preliminary Technical Information

Linear L2^TMPower

MOSFET with extended

FBSOA

V_DSS= 600V

I_D25= 30A

R_DS(on)≤ 240mΩ

IXTH30N60L2

IXTQ30N60L2

IXTT30N60L2

N-Channel Enhancement Mode

Avalanche rated

TO-247

Symbol

V_DSS

Test Conditions

Maximum Ratings

(TAB)

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

600

V_DGR

TO-3P

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

(TAB)

I_A

T_C= 25°C

E_AS

TO-268

P_D

T_C= 25°C

540

T_J

-55 to +150

+150

°C

T_JM

T_stg

-55 to +150

(TAB)

T_L

1.6mm (0.063in) from case for 10s

Plastic body for 10s

300

260

°C

T_SOLD

M_d

Mounting torque (TO-247&TO-3P)

1.13/10

Nm/lb.in.

G = Gate

= Drain

S = Source

TAB = Drain

Weight

TO-247

TO-3P

TO-268

6.0

5.5

4.0

Features

^zDesigned for linear operation

^zInternational standard packages

^zAvalanche rated

Symbol

Test Conditions

Characteristic Values

^zMolding epoxies meet UL 94 V-0

flammability classification

(T_J= 25°C, unless otherwise specified)

Min.

600

2.5

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 250μA

V_GS= ±20V, V_DS= 0V

^zGuaranteed FBSOA at 75°C

4.5

Applications

±100 nA

I_DSS

V_DS= V_DSS

V_GS= 0V

50 μA

300 μA

^zSolid state circuit breakers

^zSoft start controls

T_J= 125°C

^zLinear amplifiers

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

240 mΩ

^zProgrammable loads

^zCurrent regulators

DS100101(01/09)

12 3 4 5 6

下载PDF

与IXTT30N60L2相关器件

型号	品牌	描述	获取价格	数据表
IXTT30N60P	IXYS	PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated	获取价格
IXTT30N60P	LITTELFUSE	Polar?标准功率MOSFET经过专门定制，可为设计人员提供在性能和成本之间取得最佳平衡	获取价格
IXTT360N055T2	IXYS	Power Field-Effect Transistor, 360A I(D), 55V, 0.0024ohm, 1-Element, N-Channel, Silicon, M	获取价格
IXTT360N055T2	LITTELFUSE	这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能	获取价格
IXTT36N50P	IXYS	N-Channel Enhancement Mode	获取价格
IXTT36N50P	LITTELFUSE	Polar?标准功率MOSFET经过专门定制，可为设计人员提供在性能和成本之间取得最佳平衡	获取价格