5秒后页面跳转
IXTT20P50P PDF预览

IXTT20P50P

更新时间: 2024-11-21 21:08:59
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 274K
描述
Power Field-Effect Transistor,

IXTT20P50P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
风险等级:1.78其他特性:AVALANCE RATED
雪崩能效等级(Eas):2500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):20 A最大漏极电流 (ID):20 A
最大漏源导通电阻:0.45 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-268AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):460 W
最大脉冲漏极电流 (IDM):60 A表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTT20P50P 数据手册

 浏览型号IXTT20P50P的Datasheet PDF文件第2页浏览型号IXTT20P50P的Datasheet PDF文件第3页浏览型号IXTT20P50P的Datasheet PDF文件第4页浏览型号IXTT20P50P的Datasheet PDF文件第5页浏览型号IXTT20P50P的Datasheet PDF文件第6页 
PolarPTM  
Power MOSFET  
VDSS = - 500V  
ID25 = - 20A  
IXTT20P50P  
IXTH20P50P  
RDS(on)  
450m  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXTT)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
- 500  
- 500  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
- 20  
- 60  
A
A
D (Tab)  
IA  
TC = 25C  
TC = 25C  
- 20  
2.5  
A
J
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
10  
V/ns  
W
460  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
Features  
International Standard Packages  
Avalanche Rated  
Rugged PolarPTM Process  
Low Package Inductance  
Fast Intrinsic Diode  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
- 500  
- 2.0  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250 A  
VDS = VGS, ID = - 250A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
- 4.5  
High-Side Switches  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
100 nA  
IDSS  
- 25 A  
TJ = 125C  
- 200 A  
Current Regulators  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
450 m  
DS99984C(11/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  

与IXTT20P50P相关器件

型号 品牌 获取价格 描述 数据表
IXTT21N50Q LITTELFUSE

获取价格

Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
IXTT21N50Q IXYS

获取价格

Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
IXTT22N60P IXYS

获取价格

Power Field-Effect Transistor, 22A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Met
IXTT240N15X4HV LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTT24N50Q IXYS

获取价格

Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
IXTT24N50Q LITTELFUSE

获取价格

Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
IXTT24P20 IXYS

获取价格

Power Field-Effect Transistor, 24A I(D), 200V, 0.15ohm, 1-Element, P-Channel, Silicon, Met
IXTT24P20 LITTELFUSE

获取价格

P通道标准功率MOSFET的额定电压范围为-100V至-600V,并采用业内流行的TO-2
IXTT26N50P LITTELFUSE

获取价格

Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Met
IXTT26N50P IXYS

获取价格

Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Met