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IXTT36N50P PDF预览

IXTT36N50P

更新时间: 2024-11-09 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 428K
描述
Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡的器件解决方案。 这些器件包含了Polar技术平台,以实现低导通电阻(Rdson)。 Polar标准MOS

IXTT36N50P 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
风险等级:5.72Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):36 A
最大漏源导通电阻:0.17 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-268AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):108 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTT36N50P 数据手册

 浏览型号IXTT36N50P的Datasheet PDF文件第2页浏览型号IXTT36N50P的Datasheet PDF文件第3页浏览型号IXTT36N50P的Datasheet PDF文件第4页浏览型号IXTT36N50P的Datasheet PDF文件第5页浏览型号IXTT36N50P的Datasheet PDF文件第6页 
PolarHVTM  
Power MOSFET  
IXTH 36N50P  
IXTQ 36N50P  
IXTT 36N50P  
IXTV 36N50P  
IXTV 36N50PS  
VDSS = 500 V  
ID25 = 36 A  
RDS(on) 170 mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-3P (IXTQ)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 150° C  
500  
500  
V
V
G
TJ = 25° C to 150° C; RGS = 1 MΩ  
(TAB)  
D
S
VGS  
Continuous  
Transient  
30  
40  
V
V
VGSM  
TO-247 (IXTH)  
ID25  
IDM  
TC =25° C  
TC = 25° C, pulse width limited by TJM  
36  
108  
A
A
IAR  
EAR  
EAS  
TC =25° C  
TC =25° C  
TC =25° C  
36  
50  
1.5  
A
mJ  
J
(TAB)  
TO-268 (IXTT)  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 3 Ω  
,
10  
V/ns  
TC =25° C  
540  
W
G
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
S
D (TAB)  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
PLUS220 (IXTV)  
Md  
Mounting torque(TO-247)  
Mounting force (PLUS220)  
1.13/10 Nm/lb.in.  
FC  
20..120/4.5..15  
N/lb  
G
D (TAB)  
D
S
Weight  
TO-247  
TO-268  
PLUS220  
TO-3P  
6
5
2
g
g
g
g
PLUS220 SMD(IXTV..S)  
5.5  
Symbol  
Test Conditions  
Characteristic Values  
G
S
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
D (TAB)  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250 µA  
VGS = 30 VDC, VDS = 0  
500  
V
V
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
3.0  
5.0  
100  
nA  
Features  
l
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
l
TJ = 125° C  
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
170 mΩ  
DS99228E(01/06)  
© 2006 IXYS All rights reserved  

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