是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | not_compliant |
风险等级: | 5.39 | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 1.5 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (ID): | 21 A | 最大漏源导通电阻: | 0.25 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-268AA |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 84 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTT22N60P | IXYS |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT240N15X4HV | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, | |
IXTT24N50Q | IXYS |
获取价格 |
Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT24N50Q | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT24P20 | IXYS |
获取价格 |
Power Field-Effect Transistor, 24A I(D), 200V, 0.15ohm, 1-Element, P-Channel, Silicon, Met | |
IXTT24P20 | LITTELFUSE |
获取价格 |
P通道标准功率MOSFET的额定电压范围为-100V至-600V,并采用业内流行的TO-2 | |
IXTT26N50P | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT26N50P | IXYS |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT26N60P | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT26N60P | IXYS |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Met |