5秒后页面跳转
IXTT28N50Q PDF预览

IXTT28N50Q

更新时间: 2024-11-05 03:13:39
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
4页 174K
描述
Power MOSFETs Q-Class

IXTT28N50Q 数据手册

 浏览型号IXTT28N50Q的Datasheet PDF文件第2页浏览型号IXTT28N50Q的Datasheet PDF文件第3页浏览型号IXTT28N50Q的Datasheet PDF文件第4页 
Advanced Technical Information  
IXTH 28N50Q  
IXTT 28N50Q  
VDSS  
ID25  
= 500 V  
= 28 A  
Power MOSFETs  
Q-Class  
RDS(on) = 0.20 Ω  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, High dv/dt  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD(IXTH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
500  
500  
V
V
VGS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
(TAB)  
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
28  
112  
28  
A
A
A
TO-268 (D3) ( IXTT)  
EAR  
EAS  
TC = 25°C  
40  
mJ  
J
1.5  
G
(TAB)  
S
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
10  
V/ns  
G = Gate  
D
= Drain  
PD  
TC = 25°C  
400  
W
S = Source TAB = Drain  
TJ  
TJM  
Tstg  
-55 to +150  
150  
-55 to +150  
°C  
°C  
°C  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mounting torque  
300  
°C  
Features  
Md  
1.13/10 Nm/lb.in.  
z IXYS advanced low Qg process  
z Low gate charge and capacitances  
- easier to drive  
Weight  
TO-247  
TO-268  
6
4
g
g
- faster switching  
z International standard packages  
z Low RDS (on)  
Symbol  
TestConditions  
Characteristic Values  
z Rated for unclamped Inductive load  
switching (UIS) rated  
(TJ = 25°C, unless otherwise specified)  
min.  
typ.  
max.  
z Molding epoxies meet UL 94 V-0  
flammability classification  
VDSS  
VGS(th)  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250 µA  
500  
2.5  
V
V
4.5  
IGSS  
IDSS  
VGS = ±30 VDC, VDS = 0  
±100  
nA  
Advantages  
VDS = V  
T
= 25°C  
25  
1
µA  
VGS = 0DVSS  
TJJ = 125°C  
mA  
z
Easy to mount  
Space savings  
z
RDS(on)  
V
= 10 V, ID = 0.5 ID25  
0.20  
PGuSlse test, t 300 µs, duty cycle d 2 %  
z
High power density  
DS99038(04/03)  
© 2003 IXYS All rights reserved  

与IXTT28N50Q相关器件

型号 品牌 获取价格 描述 数据表
IXTT2N170D2 LITTELFUSE

获取价格

不同于增强型MOSFET,这些耗尽型器件在“常开”模式下运行,因此栅极引出线处需要的开启电
IXTT30N50L LITTELFUSE

获取价格

当功率MOSFET用于线性模式工作时,相对于传统的开关模式具有相当高的热应力和电应力,这是
IXTT30N50L2 IXYS

获取价格

Linear L2TM Power MOSFET with extended FBSOA N-Channel Enhancement Mode
IXTT30N50L2 LITTELFUSE

获取价格

这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用,具有低热阻、高功率密度和正
IXTT30N50P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTT30N60L2 IXYS

获取价格

Linear L2 Power MOSFET with extended FBSOA
IXTT30N60L2 LITTELFUSE

获取价格

这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用,具有低热阻、高功率密度和正
IXTT30N60P IXYS

获取价格

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
IXTT30N60P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTT360N055T2 IXYS

获取价格

Power Field-Effect Transistor, 360A I(D), 55V, 0.0024ohm, 1-Element, N-Channel, Silicon, M