是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-268AA |
包装说明: | PLASTIC, TO-268, 3 PIN | 针数: | 4 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.76 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 1.5 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (ID): | 21 A |
最大漏源导通电阻: | 0.25 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-268AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 84 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTT22N60P | IXYS |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 600V, 0.33ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT240N15X4HV | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, | |
IXTT24N50Q | IXYS |
获取价格 |
Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT24N50Q | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT24P20 | IXYS |
获取价格 |
Power Field-Effect Transistor, 24A I(D), 200V, 0.15ohm, 1-Element, P-Channel, Silicon, Met | |
IXTT24P20 | LITTELFUSE |
获取价格 |
P通道标准功率MOSFET的额定电压范围为-100V至-600V,并采用业内流行的TO-2 | |
IXTT26N50P | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT26N50P | IXYS |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT26N60P | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Met | |
IXTT26N60P | IXYS |
获取价格 |
Power Field-Effect Transistor, 26A I(D), 600V, 0.27ohm, 1-Element, N-Channel, Silicon, Met |