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IXTT12N150 PDF预览

IXTT12N150

更新时间: 2024-11-18 20:01:35
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 175K
描述
Power Field-Effect Transistor,

IXTT12N150 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.19
JESD-609代码:e3湿度敏感等级:1
端子面层:Matte Tin (Sn)Base Number Matches:1

IXTT12N150 数据手册

 浏览型号IXTT12N150的Datasheet PDF文件第2页浏览型号IXTT12N150的Datasheet PDF文件第3页浏览型号IXTT12N150的Datasheet PDF文件第4页浏览型号IXTT12N150的Datasheet PDF文件第5页 
High Voltage  
Power MOSFET  
VDSS = 1500V  
ID25 = 12A  
RDS(on) 2.2  
IXTT12N150  
IXTH12N150  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-268 (IXTT)  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1500  
1500  
V
V
D (Tab)  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
TO-247 (IXTH)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
12  
40  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
6
A
G
D
D (Tab)  
750  
mJ  
S
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
5
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
890  
Tab = Drain  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
TL  
TSOLD  
1.6mm (0.062 in.) From Case for 10s  
Plastic Body for 10s  
300  
260  
C  
C  
Features  
Md  
Mounting Torque  
1.13 / 10  
Nm/lb.in.  
International Standard Packages  
Molding Epoxies Weet UL 94 V-0  
Flammability Classification  
Fast Intrinsic Diode  
Weight  
TO-268  
TO-247  
4.0  
6.0  
g
g
Low Package Inductance  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1500  
2.5  
Typ.  
Max.  
Advantages  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250A  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Easy to Mount  
Space Savings  
High Power Density  
4.5  
100 nA  
IDSS  
25 A  
500 A  
Applications  
TJ = 125C  
High Voltage Power Supplies  
Capacitor Discharge  
Pulse Circuits  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
2.2  
DS100425C(6/15)  
© 2015 IXYS CORPORATION, All Rights Reserved  

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