5秒后页面跳转
IXTT140P10T PDF预览

IXTT140P10T

更新时间: 2024-11-05 19:45:39
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
7页 175K
描述
Power Field-Effect Transistor,

IXTT140P10T 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:not_compliant
风险等级:5.73JESD-609代码:e3
湿度敏感等级:1端子面层:Matte Tin (Sn)
Base Number Matches:1

IXTT140P10T 数据手册

 浏览型号IXTT140P10T的Datasheet PDF文件第2页浏览型号IXTT140P10T的Datasheet PDF文件第3页浏览型号IXTT140P10T的Datasheet PDF文件第4页浏览型号IXTT140P10T的Datasheet PDF文件第5页浏览型号IXTT140P10T的Datasheet PDF文件第6页浏览型号IXTT140P10T的Datasheet PDF文件第7页 
TrenchPTM  
Power MOSFETs  
VDSS = -100V  
ID25 = -140A  
IXTT140P10T  
IXTH140P10T  
RDS(on)  
10mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXTT)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
-100  
-100  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
G
D
S
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
-140  
A
A
D (Tab)  
- 400  
IA  
TC = 25°C  
TC = 25°C  
-140  
2.5  
A
J
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
568  
Features  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
z
International Standard Packages  
Avalanche Rated  
Extended FBSOA  
Fast Intrinsic Diode  
Low RDS(ON) and QG  
z
z
z
z
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
-100  
V
V
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
z
- 2.0  
- 4.0  
z
z
±100 nA  
z
IDSS  
- 10 μA  
-150 μA  
z
TJ = 125°C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
10 mΩ  
DS100371B(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

与IXTT140P10T相关器件

型号 品牌 获取价格 描述 数据表
IXTT16N10D2 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTT16N20D2 IXYS

获取价格

Depletion Mode MOSFET
IXTT16N20D2 LITTELFUSE

获取价格

不同于增强型MOSFET,这些耗尽型器件在“常开”模式下运行,因此栅极引出线处需要的开启电
IXTT16N50D2 LITTELFUSE

获取价格

不同于增强型MOSFET,这些耗尽型器件在“常开”模式下运行,因此栅极引出线处需要的开启电
IXTT16P60P IXYS

获取价格

Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode
IXTT16P60P LITTELFUSE

获取价格

Polar? P通道MOSFET采用我们的Polar技术平台制造,相比传统产品将通态电阻(
IXTT170N10P LITTELFUSE

获取价格

Power Field-Effect Transistor, 170A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, M
IXTT170N10P IXYS

获取价格

PolarTM Power MOSFET
IXTT170N10P-TR LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTT1N100 IXYS

获取价格

High Voltage MOSFET