Datasheet > IXTT16P60P

IXTT16P60P

更新时间： 2024-11-06 14:56:15

品牌	Logo	应用领域
力特 - LITTELFUSE		开关栅栅极
页数	文件大小	规格书
6页	156K
描述
Polar? P通道MOSFET采用我们的Polar技术平台制造，相比传统产品将通态电阻(RDSon)显著降低30%，并将栅极电荷(Qg)降低40%，从而降低了传导损失，并能提供出色的开关性能。

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中文翻译

获取价格

数据手册

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IXTT16P60P 数据手册

PolarP^TM

Power MOSFETs

V_DSS= - 600V

I_D25= - 16A

IXTH16P60P

IXTT16P60P

R_DS(on)

≤

720mΩ

P-Channel Enhancement Mode

Avalanche Rated

TO-268 (IXTT)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

- 600

TO-247 (IXTH)

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

- 16

- 48

D (Tab)

I_A

T_C= 25°C

- 16

2.5

G = Gate

= Drain

E_AS

S = Source

Tab = Drain

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

460

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

Features

^zInternational Standard Packages

^zAvalanche Rated

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

^zRugged PolarP^TMProcess

^zFast intrinsic Diode

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

^zLow Package Inductance

Weight

TO-268

TO-247

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

- 600

- 2.0

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250μA

V_DS= V_GS, I_D= - 250μA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Applications

- 4.0

High-Side Switches

Push-Pull Amplifiers

DC Choppers

Current Regulators

±100 nA

I_DSS

- 25 μA

T_J= 125°C

- 200 μA

Automatic Test Equipment

R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

720 mΩ

DS99988B(01/13)

12 3 4 5 6

中文翻译

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