5秒后页面跳转
IXTT16P60P PDF预览

IXTT16P60P

更新时间: 2024-11-19 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE 开关栅极
页数 文件大小 规格书
6页 156K
描述
Polar? P通道MOSFET采用我们的Polar技术平台制造,相比传统产品将通态电阻(RDSon)显著降低30%,并将栅极电荷(Qg)降低40%,从而降低了传导损失,并能提供出色的开关性能。

IXTT16P60P 数据手册

 浏览型号IXTT16P60P的Datasheet PDF文件第2页浏览型号IXTT16P60P的Datasheet PDF文件第3页浏览型号IXTT16P60P的Datasheet PDF文件第4页浏览型号IXTT16P60P的Datasheet PDF文件第5页浏览型号IXTT16P60P的Datasheet PDF文件第6页 
PolarPTM  
Power MOSFETs  
VDSS = - 600V  
ID25 = - 16A  
IXTH16P60P  
IXTT16P60P  
RDS(on)  
720mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-268 (IXTT)  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 600  
- 600  
V
V
TO-247 (IXTH)  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 16  
- 48  
A
A
G
D
S
D (Tab)  
IA  
TC = 25°C  
TC = 25°C  
- 16  
2.5  
A
J
G = Gate  
D
= Drain  
EAS  
S = Source  
Tab = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
460  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
Features  
z International Standard Packages  
z Avalanche Rated  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Rugged PolarPTM Process  
z Fast intrinsic Diode  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
z Low Package Inductance  
Weight  
TO-268  
TO-247  
4
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
- 600  
- 2.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
- 4.0  
z
High-Side Switches  
Push-Pull Amplifiers  
DC Choppers  
Current Regulators  
±100 nA  
z
z
IDSS  
- 25 μA  
z
TJ = 125°C  
- 200 μA  
z
Automatic Test Equipment  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
720 mΩ  
DS99988B(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

与IXTT16P60P相关器件

型号 品牌 获取价格 描述 数据表
IXTT170N10P LITTELFUSE

获取价格

Power Field-Effect Transistor, 170A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, M
IXTT170N10P IXYS

获取价格

PolarTM Power MOSFET
IXTT170N10P-TR LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTT1N100 IXYS

获取价格

High Voltage MOSFET
IXTT1N250HV LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTT1N250HV-TRL IXYS

获取价格

Power Field-Effect Transistor,
IXTT1N300P3HV IXYS

获取价格

Power Field-Effect Transistor
IXTT1N300P3HV LITTELFUSE

获取价格

Polar3?标准功率MOSFET适用于多种多样的电源开关系统,包括高压电源、电容放电电路
IXTT1N450HV IXYS

获取价格

High Voltage Power MOSFET
IXTT1N450HV LITTELFUSE

获取价格

超高电压系列的N通道标准MOSFET专为要求严苛的快速切换电源转换应用设计,这类应用需要高