Datasheet > IXTT1N300P3HV

IXTT1N300P3HV

更新时间： 2024-11-05 17:12:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	216K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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IXTT1N300P3HV 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.76	Base Number Matches：	1

IXTT1N300P3HV 数据手册

Preliminary Technical Information

High Voltage

Power MOSFET

V_DSS

I_D25

R_DS(on) 50

= 3000V

= 1.00A

IXTT1N300P3HV

IXTH1N300P3HV

N-Channel Enhancement Mode

TO-268HV (IXTT)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

3000

TO-247HV (IXTH)

V_DGR

V_GSS

V_GSM

Continuous

Transient

20

30

I_D25

I_D110

I_DM

T_C= 25C

T_C= 110C

T_C= 25C, Pulse Width Limited by T_JM

1.00

0.65

2.60

D (Tab)

P_D

T_C= 25C

195

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

C

G = Gate

S = Source

= Drain

Tab = Drain

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features

M_d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in

Weight

TO-268HV

TO-247HV

4.0

6.0



High Blocking Voltage

High Voltage Packages



Advantages



Easy to Mount

Space Savings

High Power Density



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

3000

2.0

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_GS= 20V, V_DS= 0V

V_DS= 0.8 • V_DSS, V_GS= 0V

Applications

4.0



High Voltage Power Supplies

Capacitor Discharge Applications

Pulse Circuits

Laser and X-Ray Generation Systems

100 nA



I_DSS

25 A



T_J= 125C

250  A

R_DS(on)

V_GS= 10V, I_D= 0.5A, Note 1



DS100590A(6/14)

12 3 4 5

中文翻译

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