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IXTT1N250HV PDF预览

IXTT1N250HV

更新时间: 2024-11-21 20:41:23
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 156K
描述
Power Field-Effect Transistor,

IXTT1N250HV 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:not_compliant
风险等级:5.34JESD-609代码:e3
湿度敏感等级:1端子面层:Matte Tin (Sn)
Base Number Matches:1

IXTT1N250HV 数据手册

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Advance Technical Information  
High Voltage  
Power MOSFET  
VDSS = 2500V  
ID25 = 1.5A  
RDS(on) 40Ω  
IXTT1N250HV  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
TO-268S  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
2500  
2500  
V
V
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
1.5  
6
A
A
PD  
TC = 25°C  
250  
W
Features  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
z
High Blocking Voltage  
High Voltage Package  
Fast Intrinsic Diode  
z
z
z
TL  
TSOLD  
1.6mm (0.062 in.) From Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Low Package Inductance  
Weight  
4
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
2500  
2.0  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
VDS = 0.8 • VDSS, VGS = 0V  
V
V
z
High Voltage Power Supplies  
Capacitor Discharge  
z
4.0  
z
Pulse Circuits  
±100 nA  
IDSS  
25 μA  
μA  
TJ = 125°C  
25  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
40  
Ω
DS100521(12/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  

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