5秒后页面跳转
IXTT1N250HV PDF预览

IXTT1N250HV

更新时间: 2024-01-02 16:00:01
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 156K
描述
Power Field-Effect Transistor,

IXTT1N250HV 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:not_compliant
风险等级:5.34JESD-609代码:e3
湿度敏感等级:1端子面层:Matte Tin (Sn)
Base Number Matches:1

IXTT1N250HV 数据手册

 浏览型号IXTT1N250HV的Datasheet PDF文件第1页浏览型号IXTT1N250HV的Datasheet PDF文件第3页浏览型号IXTT1N250HV的Datasheet PDF文件第4页浏览型号IXTT1N250HV的Datasheet PDF文件第5页浏览型号IXTT1N250HV的Datasheet PDF文件第6页 
IXTT1N250HV  
Symbol  
Test Conditions  
Characteristic Values  
TO-268 (VHV) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 50V, ID = 0.5A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
1.0  
1.8  
mS  
Ciss  
Coss  
Crss  
1660  
77  
pF  
pF  
pF  
23  
PIN:  
1 - Gate  
2 - Source  
3 - Drain  
td(on)  
tr  
td(off)  
tf  
69  
25  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A  
RG = 5Ω (External)  
132  
39  
Qg(on)  
Qgs  
41  
8
nC  
nC  
nC  
VGS = 10V, VDS = 600V, ID = 0.5A  
Qgd  
16  
RthJC  
RthCS  
0.50 °C/W  
°C/W  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
1.5  
6
IS  
VGS = 0V  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = 1A, VGS = 0V, Note 1  
IF = 1A, -di/dt = 100A/μs, VR = 200V  
1.5  
V
2.5  
μs  
Note  
1. Pulse test, t 300μs, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  

与IXTT1N250HV相关器件

型号 品牌 描述 获取价格 数据表
IXTT1N250HV-TRL IXYS Power Field-Effect Transistor,

获取价格

IXTT1N300P3HV IXYS Power Field-Effect Transistor

获取价格

IXTT1N300P3HV LITTELFUSE Polar3?标准功率MOSFET适用于多种多样的电源开关系统,包括高压电源、电容放电电路

获取价格

IXTT1N450HV IXYS High Voltage Power MOSFET

获取价格

IXTT1N450HV LITTELFUSE 超高电压系列的N通道标准MOSFET专为要求严苛的快速切换电源转换应用设计,这类应用需要高

获取价格

IXTT20N50D IXYS Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Met

获取价格