Datasheet > IXTT1N250HV-TRL

IXTT1N250HV-TRL

更新时间： 2024-11-05 21:19:07

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	154K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTT1N250HV-TRL 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Base Number Matches：	1

IXTT1N250HV-TRL 数据手册

Advance Technical Information

High Voltage

Power MOSFET

V_DSS= 2500V

I_D25= 1.5A

R_DS(on)≤ 40Ω

IXTT1N250HV

N-Channel Enhancement Mode

Fast Intrinsic Diode

TO-268S

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

2500

G = Gate

S = Source

= Drain

Tab = Drain

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

1.5

P_D

T_C= 25°C

250

Features

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

High Blocking Voltage

High Voltage Package

Fast Intrinsic Diode

T_L

T_SOLD

1.6mm (0.062 in.) From Case for 10s

Plastic Body for 10s

300

260

°C

Low Package Inductance

Weight

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

2500

2.0

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ±20V, V_DS= 0V

V_DS= 0.8 • V_DSS, V_GS= 0V

High Voltage Power Supplies

Capacitor Discharge

4.0

Pulse Circuits

±100 nA

I_DSS

25 μA

μA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

DS100521(12/12)

12 3 4 5

中文翻译

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