Datasheet > IXTT170N10P-TR

IXTT170N10P-TR

更新时间： 2024-11-05 19:28:35

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	166K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

数据手册

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IXTT170N10P-TR 数据手册

Polar^TM

Power MOSFET

V_DSS= 100V

I_D25= 170A

R_DS(on)≤ 9mΩ

IXTT170N10P

IXTQ170N10P

IXTK170N10P

TO-268 (IXTT)

N-Channel Enhancement Mode

Avalanche Rated

Tab

TO-3P (IXTQ)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 175°C

100

V_DGR

T_J= 25°C to 175°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

Tab

I_D25

I_L(RMS)

T_C= 25°C

External Lead Current Limit

170

160

TO-264 (IXTK)

I_DM

T_C= 25°C, Pulse Width Limited by T_JM

350

I_A

T_C= 25°C

E_AS

Tab

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 175°C

V/ns

T_C= 25°C

715

T_J

-55 to +175

+175

°C

G = Gate

S = Source

= Drain

Tab = Drain

T_JM

T_stg

-55 to +175

Features

T_L

1.6mm (0.063in) from Case for 10s

Plastic Body for 10s

300

260

°C

T_SOLD

^zInternational Standard Packages

^zFast Intrinsic Rectifier

^zAvalanche Rated

M_d

Mounting Torque (TO-264 & TO-3P)

1.13/10

Nm/lb.in.

Weight

TO-268

TO-3P

TO-264

4.0

5.5

10.0

^zLow R_DS(ON)and Q_G

^zLow Package Inductance

Advantages

^zHigh Power Density

^zEasy to Mount

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

100

2.5

Typ.

Max.

^zSpace Savings

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

5.0

Applications

±100 nA

^zSwitch-Mode and Resonant-Mode

Power Supplies

I_DSS

25 μA

T_J= 150°C

250 μA

^zDC-DC Converters

^zLaser Drivers

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

V_GS= 15V, I_D= 350A

9 mΩ

mΩ

^zAC and DC Motor Drives

^zRobotics and Servo Controls

DS99176F(01/10)

12 3 4 5 6

中文翻译

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