Datasheet > IXTT11P50

IXTT11P50

更新时间： 2024-11-17 22:11:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	124K
描述
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

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中文翻译

获取价格

数据手册

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IXTT11P50 数据手册

V_DSS

I_D25R_DS(on)

Standard Power MOSFET

P-ChannelEnhancementMode

IXTH/IXTT 10P50

-500 V -10 A 0.90 Ω

-500 V -11 A 0.75 Ω

AvalancheRated

IXTH/IXTT 11P50

TO-247AD(IXTH)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

-500

V_GS

V_GSM

Continuous

Transient

±20

±30

(TAB)

I_D25

I_DM

I_AR

T_C= 25°C

10P50

11P50

-10

-11

TO-268 (IXTT) Case Style

T_C= 25°C, pulse width limited by T_J

T_C= 25°C

10P50

-40

11P50

-44

10P50

11P50

-10

-11

(TAB)

E_AR

P_D

T_C= 25°C

D = Drain

300

G = Gate

S = Source

TAB = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

M_d

Mounting torque

(TO-247)

1.13/10 Nm/lb.in.

Features

Weight

TO-247AD

TO-268

International standard packages

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Low package inductance

- easy to drive and to protect

V_DSS

V_GS= 0 V, I = -250 µA

-500

BV_DSSTemp^Derature Coefficient

0.054

%/K

Advantages

Easy to mount

V_GS(th)

V_DS= V , I_D= -250 µA

-3.0

-5.0

V_GS(th)Te^Gm^SperatureCoefficient

-0.122

%/K

Space savings

High power density

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100

V_DS= 0.8 • V_DSS

V_GS= 0 V

T = 25°C

T_J^J= 125°C

-200

µA

-1 mA

R_DS(on)

V_GS= -10 V, I_D= 0.5 • I_D25

10P50

11P50

0.90

0.75

Ω

R_DS(on)TemperatureCoefficient

0.6 %/K

94535F (7/02)

中文翻译

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