Datasheet > IXTT120N15P

IXTT120N15P

更新时间： 2024-11-19 04:26:19

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	213K
描述
Power Field-Effect Transistor, 120A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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数据手册

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IXTT120N15P 数据手册

IXTQ 120N15P

IXTT 120N15P

V_DSS= 150 V

I_D25= 120 A

R_DS(on)≤ 16 mΩ

PolarHT^TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Symbol

Test Conditions

Maximum Ratings

TO-3P (IXTQ)

V_DSS

V_DGR

T_J= 25° C to 175° C

T_J= 25° C to 175° C; R_GS= 1 MΩ

150

V_DSS

V_GSM

Continuous

Transient

I_D25

T_C=25° C

120

(TAB)

I_D(RMS)

I_DM

External lead current limit

T_C= 25° C, pulse width limited by T_JM

260

I_AR

T_C=25° C

E_AR

E_AS

T_C=25° C

mJ TO-268 (IXTT)

2.0

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 4 Ω

V/ns

D (TAB)

T_C=25° C

600

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +150

°C

G = Gate

S = Source

D = Drain

TAB = Drain

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

260

°C

Features

M_d

Mounting torque

(TO-3P)

1.13/10 Nm/lb.in.

Weight

TO-3P

TO-268

5.5

5.0

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Symbol

Test Conditions

Characteristic Values

(T_J= 25° C, unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250µA

V_GS= 20 V_DC, V_DS= 0

150

Advantages

3.0

5.0

Easy to mount

Space savings

100

High power density

I_DSS

V_DS= V_DSS

V_GS= 0 V

500

µA

T_J= 175° C

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

16 mΩ

Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

DS99280E(10/05)

12 3 4 5 6

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