Datasheet > IXTT120N15P

IXTT120N15P

更新时间： 2023-01-02 15:13:38

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	213K
描述
Power Field-Effect Transistor, 120A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

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IXTT120N15P 数据手册

IXTQ 120N15P

IXTT 120N15P

Fig. 1. Output Characteristics

@ 25

Fig. 2. Extended Output Characteristics

@ 25 C

120

100

280

240

200

160

120

V_GS= 10V

= 10V

0.5

1.5

2.5

V_{D S}- Volts

Fig. 3. Output Characteristics

@ 150

Fig. 4. R_DS(onNormalized to 0.5 I_D25

Value vs. Junction Temperature

)

120

100

2.8

2.6

2.4

2.2

V_GS= 10V

I_D= 120A

1.8

1.6

1.4

1.2

I_D= 60A

0.8

0.6

V_{D S}- Volts

-50 -25

T_J- Degrees Centigrade

75 100 125 150 175

Fig. 5. R_DS(on)Normalized to 0.5 I_D25

Value vs. Drain Current

Fig. 6. Drain Current vs. Case

Temperature

3.5

External Lead Current Limit

T_J= 175 C

2.5

V_GS= 10V

= 15V

1.5

T_J= 25 C

0.5

-50 -25

T_C- Degrees Centigrade

75 100 125 150 175

30 60 90 120 150 180 210 240 270 300

I _D- Amperes

1 234 5 6

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