Datasheet > CS3N90A31R-G

CS3N90A31R-G

更新时间： 2024-05-14 22:08:25

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	408K
描述
TO-251

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CS3N90A31R-G 数据手册

Silicon N-Channel Power MOSFET

CS3N90 A31R-G

○

General Description：

V_DSS

900

CS3N90 A31R-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is TO-251,

which accords with the RoHS standard.

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

4.8

Ω

Features：

l Fast Switching

l Low ON Resistance(Rdson≤5.5Ω)

l Low Gate Charge (Typical Data:17.4 nC)

l Low Reverse transfer capacitances(Typical: 3.8pF)

l 100% Single Pulse avalanche energy Test

l Halogen Free

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tj= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

900

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

I_D

1.9

I_DM

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

125

V/ns

E_AS

5.0

dv/dt

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

P_D

0.7

150，–55 to 150

300

W/℃

℃

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

T_J，T_stg

T_L

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

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