Datasheet > NCE60P70G

NCE60P70G

更新时间： 2024-03-03 10:10:32

品牌	Logo	应用领域
新洁能 - NCEPOWER		开关
页数	文件大小	规格书
7页	675K
描述
新洁能提供的N型12V~200V和P型12V~150V沟槽型（Trench）功率MOSFET产品，采用先进的工艺制造技术、更优的工艺条件、精细优化的器件结构不断优化产品导通电阻、开关特性、可靠性等

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NCE60P70G 数据手册

http://www.ncepower.com

NCE60P70G

NCE P-Channel Enhancement Mode Power MOSFET

Description

General Features

The NCE60P70G uses advanced trench technology and ● V_DS=-60V,I_D=-70A

design to provide excellent R_DS(ON)with low gate charge .This

device is well suited for high current load applications.

R_DS(ON)=11mΩ (typical) @ V_GS=-10V

R_DS(ON)=13mΩ (typical) @ V_GS=-4.5V

● High density cell design for ultra low Rdson

● Very low on-resistance R_DS(on)

● Good stability and uniformity with high E_AS

● 150 °C operating temperature

● Pb-free lead plating

Application

● High side switch for full bridge converter

● DC/DC converter for LCD display

100% UIS TESTED!

100% ΔVds TESTED!

DFN 5X6

Schematic Diagram

Bottom View

Top View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE60P70G

DFN5X6-8L

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

-60

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

VGS

-70

-49

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current^{(Note 1)}

-280

110

0.88

560

Maximum Power Dissipation

P_D

Derating factor

W/℃

℃

Single pulse avalanche energy ^{(Note 5)}

Operating Junction and Storage Temperature Range

E_AS

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance, Junction-to-Case

Thermal Resistance,Junction-to-Ambient^{(Note 2)}

R_θJC

R_θJA

1.14

℃/W

Wuxi NCE Power Co., Ltd

Page1

V2.0

12 3 4 5 6 7

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