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IXFV110N10P PDF预览

IXFV110N10P

更新时间: 2024-11-18 11:14:07
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 308K
描述
PolarHT HiPerFET Power MOSFET

IXFV110N10P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.83
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1000 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):110 A
最大漏源导通电阻:0.015 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):250 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFV110N10P 数据手册

 浏览型号IXFV110N10P的Datasheet PDF文件第2页浏览型号IXFV110N10P的Datasheet PDF文件第3页浏览型号IXFV110N10P的Datasheet PDF文件第4页浏览型号IXFV110N10P的Datasheet PDF文件第5页 
PolarHTTM HiPerFET  
Power MOSFET  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
IXFH 110N10P  
IXFV 110N10P  
IXFV 110N10PS  
VDSS = 100 V  
ID25 = 110 A  
RDS(on) 15 mΩ  
trr  
150 ns  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247 (IXFH)  
VDSS  
VDGR  
TJ = 25° C to 175° C  
100  
100  
V
TJ = 25° C to 175° C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
(TAB)  
ID25  
ID(RMS)  
IDM  
TC =25° C  
External lead current limit  
TC = 25° C, pulse width limited by TJM  
110  
75  
250  
A
A
A
PLUS220 (IXFV)  
IAR  
TC =25° C  
60  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
40  
mJ  
J
1.0  
G
D
S
D (TAB)  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
,
10  
V/ns  
PLUS220SMD (IXFV...S)  
TC =25° C  
480  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
G
S
D (TAB)  
Md  
Mounting torque  
Mounting Force  
(TO-247)  
1.13/10 Nm/lb.in.  
G = Gate  
D = Drain  
FC  
(PLUS220)  
11..65 / 2.5..15  
N/lb  
S = Source  
TAB = Drain  
Weight  
TO-247  
PLUS220  
6
4
g
g
Features  
Fast intrinsic diode  
l
l
l
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 20 VDC, VDS = 0  
100  
V
V
2.5  
5.0  
Advantages  
100  
nA  
l
Easy to mount  
Space savings  
High power density  
l
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
l
TJ = 150° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
15 mΩ  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99212E(01/06)  
© 2006 IXYS All rights reserved  

IXFV110N10P 替代型号

型号 品牌 替代类型 描述 数据表
IXFV110N10PS IXYS

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