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IXFV12N100P PDF预览

IXFV12N100P

更新时间: 2024-11-18 11:14:07
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 174K
描述
Polar HiPerFET Power MOSFETs

IXFV12N100P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:PLASTIC, PLUS220, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.84其他特性:AVALANCHE RATED
雪崩能效等级(Eas):750 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1000 V
最大漏极电流 (Abs) (ID):12 A最大漏极电流 (ID):12 A
最大漏源导通电阻:1.05 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):463 W
最大脉冲漏极电流 (IDM):24 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFV12N100P 数据手册

 浏览型号IXFV12N100P的Datasheet PDF文件第2页浏览型号IXFV12N100P的Datasheet PDF文件第3页浏览型号IXFV12N100P的Datasheet PDF文件第4页 
PolarTM HiPerFETTM  
Power MOSFETs  
IXFH12N100P  
IXFV12N100P  
IXFV12N100PS  
VDSS = 1000V  
ID25 = 12A  
RDS(on) 1.05Ω  
300ns  
trr  
N-Channel Enhancement Mode  
Avalanche Rated  
PLUS220 (IXFV)  
Fast Intrinsic Rectifier  
G
D
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
PLUS220SMD (IXFV_S)  
TJ = 25°C to 150°C  
1000  
1000  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
G
S
D (Tab)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
12  
24  
A
A
TO-247 (IXFH)  
IAR  
TC = 25°C  
TC = 25°C  
6
A
EAS  
750  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
15  
V/ns  
W
G
D
S
463  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
D
= Drain  
TJM  
Tstg  
S = Source  
Tab = Drain  
-55 ... +150  
TL  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
TSOLD  
Md  
Mounting Torque (TO-247)  
Mounting Force (PLUS220)  
1.13/10  
Nm/lb.in.  
N/lb.  
z
Low RDS(on) and QG  
Avalanche Rated  
Low Package Inductance  
Fast Intrinsic Rectifier  
z
z
z
FC  
11..65/2.5..14.6  
Weight  
TO-247  
PLUS220 types  
6
4
g
g
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1000  
3.5  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
6.5  
Applications  
± 100 nA  
z
Switch-Mode and Resonant-Mode  
IDSS  
20 μA  
Power Supplies  
DC-DC Converters  
Laser Drivers  
AC and DC Motor Drives  
z
TJ = 125°C  
1.0 mA  
z
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
1.05  
Ω
z
z
Robotics and Servo Controls  
DS99920B(03/11)  
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