5秒后页面跳转
IXFV12N120P PDF预览

IXFV12N120P

更新时间: 2024-11-18 11:14:07
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 173K
描述
Polar Power MOSFET HiPerFET

IXFV12N120P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:PLASTIC, PLUS220, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.84Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1200 V最大漏极电流 (Abs) (ID):12 A
最大漏极电流 (ID):12 A最大漏源导通电阻:1.35 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):543 W最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFV12N120P 数据手册

 浏览型号IXFV12N120P的Datasheet PDF文件第2页浏览型号IXFV12N120P的Datasheet PDF文件第3页浏览型号IXFV12N120P的Datasheet PDF文件第4页 
PolarTM Power MOSFET  
HiPerFETTM  
IXFH12N120P  
IXFV12N120P  
IXFV12N120PS  
VDSS = 1200V  
ID25 = 12A  
RDS(on) 1.35Ω  
300ns  
N-Channel Enhancement Mode  
Avalanche Rated  
trr  
PLUS220 (IXFV)  
Fast Intrinsic Diode  
G
D
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (TAB)  
TJ = 25°C to 150°C  
1200  
1200  
V
V
PLUS220SMD (IXFV_S)  
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
G
S
ID25  
IDM  
TC = 25°C  
12  
30  
A
A
D (TAB)  
TC = 25°C, pulse width limited by TJM  
TO-247 (IXFH)  
IA  
TC = 25°C  
TC = 25°C  
6
A
EAS  
500  
mJ  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
15  
V/ns  
W
D (TAB)  
543  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
S = Source TAB = Drain  
D
= Drain  
TJM  
Tstg  
-55 ... +150  
Features  
z International standard packages  
z Fast recovery diode  
TL  
Maximum lead temperature for soldering  
Plastic body for 10s  
300  
260  
°C  
°C  
TSOLD  
z Unclamped Inductive Switching (UIS)  
rated  
Md  
Mounting torque (TO-247)  
Mounting force (PLUS 220)  
1.13/10  
Nm/lb.in.  
N/lb.  
z Low package inductance  
- easy to drive and to protect  
FC  
11..65 / 2.5..14.6  
Weight  
TO-247  
PLUS 220 types  
6
4
g
g
Advantages  
z
Easy to mount  
Space savings  
z
z
High power density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
1200  
3.5  
Typ.  
Max.  
Applications:  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
V
V
z High Voltage Switched-mode and  
resonant-mode power supplies  
z High Voltage Pulse Power Applications  
z High Voltage Discharge circuits in  
Lasers Pulsers, Spark Igniters, RF  
Generators  
6.5  
± 100 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
25 μA  
2 mA  
TJ = 125°C  
z High Voltage DC-DC converters  
z High Voltage DC-AC inverters  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
1.15  
1.35  
Ω
DS99894A (04/08)  
© 2008 IXYS CORPORATION, All rights reserved  

与IXFV12N120P相关器件

型号 品牌 获取价格 描述 数据表
IXFV12N120PS IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFV12N80P IXYS

获取价格

PolarHV HiPerFET Power MOSFET
IXFV12N80PS IXYS

获取价格

PolarHV HiPerFET Power MOSFET
IXFV12N90P IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFV12N90PS IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFV14N80P IXYS

获取价格

PolarHV HiPerFET Power MOSFET
IXFV14N80PS IXYS

获取价格

PolarHV HiPerFET Power MOSFET
IXFV15N100P IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFV15N100PS IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFV16N80P IXYS

获取价格

PolarHV Power MOSFET