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IXFV12N120P PDF预览

IXFV12N120P

更新时间: 2024-11-05 11:14:07
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 173K
描述
Polar Power MOSFET HiPerFET

IXFV12N120P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:PLASTIC, PLUS220, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.84Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1200 V最大漏极电流 (Abs) (ID):12 A
最大漏极电流 (ID):12 A最大漏源导通电阻:1.35 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):543 W最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFV12N120P 数据手册

 浏览型号IXFV12N120P的Datasheet PDF文件第2页浏览型号IXFV12N120P的Datasheet PDF文件第3页浏览型号IXFV12N120P的Datasheet PDF文件第4页 
PolarTM Power MOSFET  
HiPerFETTM  
IXFH12N120P  
IXFV12N120P  
IXFV12N120PS  
VDSS = 1200V  
ID25 = 12A  
RDS(on) 1.35Ω  
300ns  
N-Channel Enhancement Mode  
Avalanche Rated  
trr  
PLUS220 (IXFV)  
Fast Intrinsic Diode  
G
D
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (TAB)  
TJ = 25°C to 150°C  
1200  
1200  
V
V
PLUS220SMD (IXFV_S)  
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
G
S
ID25  
IDM  
TC = 25°C  
12  
30  
A
A
D (TAB)  
TC = 25°C, pulse width limited by TJM  
TO-247 (IXFH)  
IA  
TC = 25°C  
TC = 25°C  
6
A
EAS  
500  
mJ  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
15  
V/ns  
W
D (TAB)  
543  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
S = Source TAB = Drain  
D
= Drain  
TJM  
Tstg  
-55 ... +150  
Features  
z International standard packages  
z Fast recovery diode  
TL  
Maximum lead temperature for soldering  
Plastic body for 10s  
300  
260  
°C  
°C  
TSOLD  
z Unclamped Inductive Switching (UIS)  
rated  
Md  
Mounting torque (TO-247)  
Mounting force (PLUS 220)  
1.13/10  
Nm/lb.in.  
N/lb.  
z Low package inductance  
- easy to drive and to protect  
FC  
11..65 / 2.5..14.6  
Weight  
TO-247  
PLUS 220 types  
6
4
g
g
Advantages  
z
Easy to mount  
Space savings  
z
z
High power density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
1200  
3.5  
Typ.  
Max.  
Applications:  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
V
V
z High Voltage Switched-mode and  
resonant-mode power supplies  
z High Voltage Pulse Power Applications  
z High Voltage Discharge circuits in  
Lasers Pulsers, Spark Igniters, RF  
Generators  
6.5  
± 100 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
25 μA  
2 mA  
TJ = 125°C  
z High Voltage DC-DC converters  
z High Voltage DC-AC inverters  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
1.15  
1.35  
Ω
DS99894A (04/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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