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IXFV22N50P PDF预览

IXFV22N50P

更新时间: 2024-11-05 11:57:15
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 182K
描述
Polar Power MOSFET HiPerFET

IXFV22N50P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:PLUS220, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.82其他特性:AVALANCHE RATED
雪崩能效等级(Eas):750 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):22 A最大漏极电流 (ID):22 A
最大漏源导通电阻:0.27 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):350 W
最大脉冲漏极电流 (IDM):55 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFV22N50P 数据手册

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PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 500V  
ID25 = 22A  
RDS(on) 270mΩ  
200ns  
IXFV22N50P  
IXFV22N50PS  
IXFH22N50P  
trr  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
PLUS220 (IXFV)  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D
S
TJ = 25°C to 150°C  
500  
V
V
D (TAB)  
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
PLUS220SMD (IXFV_S)  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
ID25  
IDM  
TC = 25°C  
22  
50  
A
A
TC = 25°C, Pulse Width Limited by TJM  
G
S
D (TAB)  
IA  
EAS  
TC = 25°C  
TC = 25°C  
22  
750  
A
mJ  
TO-247 (IXFH)  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
350  
V/ns  
W
TJ  
-55 ... +150  
150  
°C  
TJM  
Tstg  
°C  
D (TAB)  
= Drain  
-55 ... +150  
°C  
G = Gate  
D
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
S = Source TAB = Drain  
Md  
Mounting Torque (TO-247)  
Mounting Force (PLUS 220)  
1.13/10  
Nm/lb.in.  
N/lb.  
Features  
FC  
11..65/2.5..14.6  
z International Standard Packages  
z Avalanche Rated  
Weight  
TO-247  
PLUS 220 types  
6
4
g
g
z Fast Intrinsic Diode  
z Low Package Inductance  
Advantages  
z High Power Density  
z Easy to Mount  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
z Space Savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 2.5mA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
Applications  
5.5  
z Switched-Mode and Resonant-Mode  
Power Supplies  
± 100 nA  
IDSS  
15 μA  
250 μA  
z DC-DC Converters  
z Laser Drivers  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
270 mΩ  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
DS99358G(07/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

IXFV22N50P 替代型号

型号 品牌 替代类型 描述 数据表
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