Datasheet > IXFX120N20

IXFX120N20

更新时间： 2024-11-22 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
5页	158K
描述
功能与特色: 应用: 优点:

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXFX120N20 数据手册

HiPerFET^TM

Power MOSFETs

IXFX 120N20

IXFK 120N20

V_DSS= 200 V

I_D25= 120 A

R_DS(on)= 17 mΩ

Single MOSFET Die

t_rr≤ 250 ns

Preliminary data sheet

PLUS247^TM(IXFX)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

200

V_GS

V_GSM

Continuous

Transient

±20

±30

(TAB)

I_D25

I_D104

I_DM

T_C= 25°C (MOSFET chip capability)

T_C= 104°C (External lead capability)

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

120

480

120

TO-264AA(IXFK)

I_AR

E_AR

E_AS

T_C= 25°C

(TAB)

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

G = Gate

S = Source

D = Drain

TAB = Drain

P_D

T_J

T_C= 25°C

560

-55 ... +150

°C

T_JM

T_stg

150

-55 ... +150

°C

Features

• International standard packages

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

- easy to drive and to protect

• Fast intrinsic rectifier

T_L

1.6 mm (0.063 in.) from case for 10 s

300

°C

M_d

Mounting torque

TO-264

0.9/6 Nm/b.in.

Weight

PLUS 247

TO-264

Applications

• DC-DC converters

• Battery chargers

Symbol

TestConditions

Characteristic Values

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC motor control

• Temperature and lighting controls

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±20 V, V_DS= 0

200

2.0

4.0 V

±200 nA

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

100 µA

2 mA

• PLUS 247^TMpackage for clip or spring

mounting

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Note 1

17 mΩ

• Space savings

• High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

98636-B (9/02)

12 3 4 5

中文翻译

下载PDF

与IXFX120N20相关器件

型号	品牌	获取价格	描述	数据表
IXFX120N25	IXYS	获取价格	HiPerFET Power MOSFETs
IXFX120N25P	IXYS	获取价格	Polar Power MOSFET HiPerFET
IXFX120N25P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFX120N30P3	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXFX120N30T	IXYS	获取价格	GigaMOS Power MOSFET
IXFX120N30T	LITTELFUSE	获取价格	沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低
IXFX120N65X2	LITTELFUSE	获取价格	这些新型器件采用电荷补偿原理和专有工艺技术开发，具有最低的导通电阻，以及低栅极电荷和卓越的
IXFX12N90Q	IXYS	获取价格	Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Meta
IXFX12N90Q	LITTELFUSE	获取价格	Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Meta
IXFX140N25T	IXYS	获取价格	GigaMOS Power MOSFET