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IXFV96N20PS PDF预览

IXFV96N20PS

更新时间: 2024-11-05 20:08:51
品牌 Logo 应用领域
IXYS 开关脉冲晶体管
页数 文件大小 规格书
5页 686K
描述
Power Field-Effect Transistor, 96A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN

IXFV96N20PS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
雪崩能效等级(Eas):1500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (ID):96 A最大漏源导通电阻:0.024 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):225 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFV96N20PS 数据手册

 浏览型号IXFV96N20PS的Datasheet PDF文件第2页浏览型号IXFV96N20PS的Datasheet PDF文件第3页浏览型号IXFV96N20PS的Datasheet PDF文件第4页浏览型号IXFV96N20PS的Datasheet PDF文件第5页 
IXFH 96N20P  
IXFV 96N20P  
IXFV 96N20PS  
VDSS  
ID25  
= 200  
= 96  
V
A
PolarHTTM  
Power MOSFET  
RDS(on) = 24 mΩ  
trr  
< 200 ns  
N-Channel Enhancement Mode  
Preliminary Data Sheet  
TO-247 (IXFH)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
200  
200  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
S
(TAB)  
ID25  
TC = 25°C  
96  
75  
A
A
A
ID(RMS)  
IDM  
External lead current limit  
TC = 25°C, pulse width limited by TJM  
PLUS220 (IXFV)  
225  
IAR  
TC = 25°C  
60  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
50  
mJ  
J
G
1.5  
D
S
(TAB)  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 4 Ω  
,
10  
V/ns  
PLUS220SMD (IXFV__S)  
TC = 25°C  
600  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +150  
°C  
°C  
°C  
G
S
D (TAB)  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10s  
300  
250  
°C  
°C  
G = Gate  
D = Drain  
TAB = Drain  
FC  
Mounting force  
11...65/2.5...111N/lb  
S = Source  
Md  
Mounting torque  
(TO-247)  
1.13/10 Nm/lb.in.  
Weight  
TO-247  
PLUS220  
6
4
g
g
Features  
z
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
z
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 20 VDC, VDS = 0  
200  
V
V
2.5  
5.0  
Advantages  
100  
nA  
z
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
Easy to mount  
z
TJ = 150°C  
Space savings  
z
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
24 mΩ  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99222(09/04)  
© 2004 IXYS All rights reserved  

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