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IXFX140N25T PDF预览

IXFX140N25T

更新时间: 2024-11-05 05:39:55
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 138K
描述
GigaMOS Power MOSFET

IXFX140N25T 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:PLASTIC, PLUS247, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76其他特性:AVALANCHE RATED
雪崩能效等级(Eas):3000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):140 A最大漏极电流 (ID):140 A
最大漏源导通电阻:0.017 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):960 W
最大脉冲漏极电流 (IDM):380 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFX140N25T 数据手册

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Advance Technical Information  
GigaMOSTM  
Power MOSFET  
VDSS = 250V  
ID25 = 140A  
RDS(on) 17mΩ  
IXFK140N25T  
IXFX140N25T  
trr  
200ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-264 (IXFK)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
250  
250  
V
V
G
D
S
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
PLUS247 (IXFX)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
140  
380  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
40  
3
A
J
PD  
TC = 25°C  
960  
20  
W
(TAB)  
dV/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
G = Gate  
S = Source  
D
= Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TAB = Drain  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
z International Standard Packages  
z High Current Handling Capability  
z Fast Intrinsic Diode  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z Avalanche Rated  
z
Low RDS(on)  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 4mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
250  
V
V
Applications  
2.5  
5.0  
z DC-DC Converters  
z Battery Chargers  
± 200 nA  
50 µA  
z Switched-Mode and Resonant-Mode  
Power Supplies  
IDSS  
TJ = 125°C  
3
mA  
z DC Choppers  
z AC Motor Drives  
RDS(on)  
VGS = 10V, ID = 60A, Note 1  
17 mΩ  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
DS100135(03/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

IXFX140N25T 替代型号

型号 品牌 替代类型 描述 数据表
IXFK140N25T IXYS

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沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低