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IXFX20N120 PDF预览

IXFX20N120

更新时间: 2024-11-02 11:14:07
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页数 文件大小 规格书
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描述
HiPerFET Power MOSFETs

IXFX20N120 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.81
雪崩能效等级(Eas):2000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1200 V
最大漏极电流 (ID):20 A最大漏源导通电阻:0.75 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):80 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

IXFX20N120 数据手册

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Advanced Technical Information  
HiPerFETTM  
Power MOSFETs  
IXFK 20N120  
IXFX 20N120  
VDSS = 1200 V  
ID25 20 A  
RDS(on) = 0.75 Ω  
=
trr 300 ns  
PLUS247TM  
(IXFX)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 150°C  
1200  
1200  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
D (TAB)  
G
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
D
S
ID25  
IDM  
IAR  
T
= 25°C  
20  
80  
10  
A
A
A
TC = 25°C, Note 1  
TO-264AA(IXFK)  
TCC = 25°C  
EAR  
EAS  
T
= 25°C  
40  
2
mJ  
J
TCC = 25°C  
G
D
D (TAB)  
S
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
5
V/ns  
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
PD  
TC = 25°C  
780  
W
TJ  
-55 ... +150  
150  
-55 ... +150  
300  
°C  
°C  
°C  
°C  
TJM  
Tstg  
TL  
Features  
z
International standard packages  
1.6 mm (0.063 in.) from case for 10 s  
z
z
z
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic rectifier  
Md  
Mounting torque  
TO-264  
0.9/6  
Nm/lb.in.  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
z
z
Applications  
z
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
power supplies  
DC choppers  
AC motor control  
Temperature and lighting controls  
z
Symbol  
TestConditions  
Characteristic Values  
z
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
VDSS  
VGS = 0 V, ID = 1mA  
1200  
2.5  
V
z
z
VGS(th)  
VDS = VGS, ID = 8mA  
4.5 V  
IGSS  
VGS = 30 V, VDS = 0  
100 nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
T = 25°C  
TJJ = 125°C  
100 µA  
z
PLUS 247TM package for clip or spring  
2 mA  
mounting  
Space savings  
z
RDS(on)  
V
= 10 V, ID = 0.5 • ID25  
0.75 Ω  
NGoSte 2  
z
High power density  
DS99112(11/03)  
© 2003 IXYS All rights reserved  

IXFX20N120 替代型号

型号 品牌 替代类型 描述 数据表
IXFX20N120P IXYS

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