Datasheet > IXFX26N100P

IXFX26N100P

更新时间： 2024-02-09 03:56:53

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	116K
描述
Polar Power MOSFET HiPerFET

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中文翻译

获取价格

数据手册
替代型号

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IXFX26N100P 数据手册

Polar^TMPower MOSFET

HiPerFET^TM

V_DSS= 1000V

I_D25= 26A

IXFK26N100P

IXFX26N100P

R_DS(on)≤ 390mΩ

N-Channel Enhancement Mode

Avalanche Rated

t_rr

≤ 300ns

Fast Intrinsic Diode

TO-264 (IXFK)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1000

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

(TAB)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

PLUS247 (IXFX)

I_AR

E_AS

T_C= 25°C

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

780

(TAB)

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate

S = Source

D = Drain

TAB = Drain

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

Features

^zFast intrinsic diode

^zInternational standard packages

^zUnclamped Inductive Switching (UIS)

rated

^zLow package inductance

- easy to drive and to protect

M_d

Mounting torque

Mounting force

(IXFK)

(IXFX)

1.13/10

Nm/lb.in.

N/lb.

F_C

20..120 /4.5..27

Weight

TO-264

TO-247

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 1mA

1000

Applications:

3.5

6.5

^zSwitched-mode and resonant-mode

power supplies

V_GS= ± 30V, V_DS= 0V

± 200

^zDC-DC Converters

^zLaser Drivers

I_DSS

V_DS= V_DSS

V_GS= 0V

μA

T_J= 125°C

^zAC and DC motor controls

^zRobotics and servo controls

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

390

mΩ

DS99853A(4/08)

12 3 4

中文翻译

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IXFX26N100P 替代型号

型号	品牌	替代类型	描述	数据表
IXFK26N100P	IXYS	功能相似	Polar Power MOSFET HiPerFET
IXFN24N100F	IXYS	功能相似	HiPerRF Power MOSFETs

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