IXFK20N120

更新时间： 2024-09-20 12:20:15

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	574K
描述
HiPerFET Power MOSFETs

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中文翻译

获取价格

数据手册
替代型号

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IXFK20N120 数据手册

Advanced Technical Information

HiPerFET^TM

Power MOSFETs

IXFK 20N120

IXFX 20N120

V_DSS= 1200 V

I_D2520 A

R_DS(on)= 0.75 Ω

t_rr≤ 300 ns

PLUS247^TM

(IXFX)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

= 25°C to 150°C

1200

T^J_J= 25°C to 150°C; R_GS= 1 MΩ

D (TAB)

V_GS

V_GSM

Continuous

Transient

I_D25

I_DM

I_AR

= 25°C

T^C= 25°C, Note 1

TO-264AA(IXFK)

T^C_C= 25°C

E_AR

E_AS

= 25°C

T^C_C= 25°C

D (TAB)

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

G = Gate

D = Drain

S = Source

TAB = Drain

P_D

T_C= 25°C

780

T_J

-55 ... +150

150

-55 ... +150

300

°C

T_JM

T_stg

T_L

Features

International standard packages

1.6 mm (0.063 in.) from case for 10 s

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Fast intrinsic rectifier

M_d

Mounting torque

TO-264

0.9/6

Nm/lb.in.

Weight

PLUS 247

TO-264

Applications

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

AC motor control

Temperature and lighting controls

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_DSS

V_GS= 0 V, I_D= 1mA

1200

2.5

V_GS(th)

V_DS= V_GS, I_D= 8mA

4.5 V

I_GSS

V_GS= 30 V, V_DS= 0

100 nA

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

T = 25°C

T_J^J= 125°C

100 µA

PLUS 247^TMpackage for clip or spring

2 mA

mounting

Space savings

R_DS(on)

= 10 V, I_D= 0.5 • I_D25

0.75 Ω

N^Go^Ste 2

High power density

DS99112(11/03)

12 3 4

中文翻译

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IXFK20N120 替代型号

型号	品牌	替代类型	描述	数据表
IXFN20N120	IXYS	类似代替	HiPerFET Power MOSFETs
IXFX20N120	IXYS	功能相似	HiPerFET Power MOSFETs

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