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IXFX170N20P PDF预览

IXFX170N20P

更新时间: 2024-11-19 14:56:47
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 154K
描述
功能与特色: 优点: 应用:

IXFX170N20P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
风险等级:5.71其他特性:AVALANCHE RATED
雪崩能效等级(Eas):4000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):170 A最大漏极电流 (ID):170 A
最大漏源导通电阻:0.014 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1250 W
最大脉冲漏极电流 (IDM):400 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFX170N20P 数据手册

 浏览型号IXFX170N20P的Datasheet PDF文件第2页浏览型号IXFX170N20P的Datasheet PDF文件第3页浏览型号IXFX170N20P的Datasheet PDF文件第4页浏览型号IXFX170N20P的Datasheet PDF文件第5页浏览型号IXFX170N20P的Datasheet PDF文件第6页 
PolarTM HiperFETTM  
Power MOSFET  
VDSS = 200V  
ID25 = 170A  
RDS(on) 14m  
IXFK170N20P  
IXFX170N20P  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-264 (IXFK)  
G
D
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
Tab  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
200  
200  
V
V
VDGR  
PLUS247 (IXFX)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
TC = 25C  
170  
A
ILRMS  
IDM  
Lead Current Limit  
TC = 25C, Pulse Width Limited by TJM  
160  
400  
A
A
G
D
Tab  
S
IA  
TC = 25C  
TC = 25C  
85  
4
A
J
EAS  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 175C  
TC = 25C  
20  
V/ns  
W
1250  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
C  
C  
C  
Features  
Dynamic dv/dt Rating  
Avalanche Rated  
Fast Intrinsic Diode  
Low QG  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
L
TSOLD  
Low RDS(on)  
Md  
Mounting Force (PLUS247)  
Mounting Torque (TO-264)  
20..120/4.5..27  
1.13/10  
N/lb  
Nm/lb.in  
Low Drain-to-Tab Capacitance  
Low Package Inductance  
Weight  
PLUS247  
TO-264  
6
10  
g
g
Advantages  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25C, Unless Otherwise Specified)  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
200  
2.5  
V
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
Power Supplies  
Uninterrupted Power Supplies  
AC Motor Drives  
DC Choppers  
High Speed Power Switching  
4.5  
V
200 nA  
IDSS  
50 A  
1mA  
TJ = 150C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
14 m  
Applications  
DS100008A(03/14)  
© 2014 IXYS CORPORATION, All Rights Reserved  

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