Preliminary Technical Information
GigaMOSTM
Power MOSFET
VDSS = 250V
ID25 = 180A
RDS(on) 12.9m
IXFK180N25T
IXFX180N25T
trr
200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
G
D
S
VDSS
VDGR
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
250
250
V
V
Tab
VGSS
VGSM
Continuous
Transient
20
30
V
V
PLUS247 (IXFX)
ID25
IL(RMS)
IDM
TC = 25C
External Lead Current Limit
TC = 25C, Pulse Width Limited by TJM
180
160
500
A
A
A
IA
EAS
TC = 25C
TC = 25C
90
5
A
J
G
D
S
Tab
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
20
V/ns
W
G = Gate
S = Source
D
= Drain
1390
Tab = Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
C
C
C
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
International Standard Packages
High Current Handling Capability
Fast Intrinsic Diode
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in
N/lb
20..120 /4.5..27
Avalanche Rated
Weight
TO-264
PLUS247
10
6
g
g
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
250
V
V
Applications
3.0
5.0
DC-DC Converters
Battery Chargers
200 nA
Switched-Mode and Resonant-Mode
Power Supplies
IDSS
50 A
2.5 mA
TJ = 125C
DC Choppers
AC Motor Drives
RDS(on)
VGS = 10V, ID = 90A, Note 1
12.9 m
Uninterruptible Power Supplies
High Speed Power Switching
Applications
DS100129A(09/14)
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