Datasheet > IXFX160N30T

IXFX160N30T

更新时间： 2024-11-21 05:39:55

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	137K
描述
GigaMOS Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IXFX160N30T 数据手册

Advance Technical Information

GigaMOS^TM

Power MOSFET

V_DSS= 300V

I_D25= 160A

R_DS(on)≤ 19mΩ

IXFK160N30T

IXFX160N30T

t_rr

≤ 200ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-264 (IXFK)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

300

T_J= 25°C to 150°C, R_GS= 1MΩ

(TAB)

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

PLUS247 (IXFX)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

160

440

I_A

E_AS

T_C= 25°C

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

(TAB)

1390

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate

S = Source

= Drain

TAB = Drain

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

Features

^zInternational Standard Packages

^zHigh Current Handling Capability

^zFast Intrinsic Diode

M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in.

N/lb.

20..120 /4.5..27

Weight

TO-264

PLUS247

^zAvalanche Rated

Low R_DS(on)

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

300

Applications

2.5

5.0

^zDC-DC Converters

^zBattery Chargers

± 200 nA

^zSwitched-Mode and Resonant-Mode

Power Supplies

I_DSS

50 µA

3 mA

T_J= 125°C

^zDC Choppers

^zAC Motor Drives

R_DS(on)

V_GS= 10V, I_D= 60A, Note 1

19 mΩ

^zUninterruptible Power Supplies

^zHigh Speed Power Switching

Applications

DS100127(03/09)

12 3 4 5

中文翻译

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IXFX160N30T 替代型号

型号	品牌	替代类型	描述	数据表
IXFB170N30P	IXYS	功能相似	Polar Power MOSFET HiPerFET
IXFK160N30T	IXYS	功能相似	GigaMOS Power MOSFET

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