5秒后页面跳转
IXFX16N90 PDF预览

IXFX16N90

更新时间: 2024-11-04 22:45:43
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 269K
描述
HiPerFET Power MOSFETs

IXFX16N90 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
风险等级:5.76外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:900 V
最大漏极电流 (Abs) (ID):16 A最大漏极电流 (ID):16 A
最大漏源导通电阻:0.65 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):360 W
最大脉冲漏极电流 (IDM):64 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFX16N90 数据手册

 浏览型号IXFX16N90的Datasheet PDF文件第2页 
HiPerFETTM  
Power MOSFETs  
IXFH16N90  
IXFX16N90  
VDSS = 900 V  
ID25  
= 16 A  
RDS(  
= 0.65 W  
on  
)
N-Channel Enhancement Mode  
High dv/dt, Low trr, HDMOSTM Family  
trr £ 200 ns  
Preliminarydata  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD  
(IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
900  
900  
V
V
(TAB)  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
16  
64  
16  
A
A
A
PLUS247TM  
(IXFX)  
EAR  
TC = 25°C  
45  
5
mJ  
C (TAB)  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
,
V/ns  
G
TJ 150°C, RG = 2 Ω  
D
PD  
TJ  
TC = 25°C  
360  
W
-55 ... +150  
°C  
Features  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
l
International standard packages  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic Rectifier  
l
l
l
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
Weight  
6
g
l
l
Applications  
l
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
Symbol  
TestConditions  
Characteristic Values  
l
(TJ = 25°C, unless otherwise specified)  
l
min. typ. max.  
power supplies  
DC choppers  
AC motor control  
Temperature and lighting controls  
l
VDSS  
VGS = 0 V, ID = 250µA  
900  
2.0  
V
V
l
VGS(th)  
VDS = VGS, ID = 5 mA  
4.5  
l
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
Advantages  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25 µA  
250 µA  
l
Easy to mount with 1 screw (TO-247)  
(isolated mounting screw hole) or  
mounting clip or spring (PLUS 247TM)  
Space savings  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
0.65  
l
l
© 1998 IXYS All rights reserved  
97547(2/98)  

与IXFX16N90相关器件

型号 品牌 获取价格 描述 数据表
IXFX16N90Q IXYS

获取价格

Power Field-Effect Transistor, 16A I(D), 900V, 0.6ohm, 1-Element, N-Channel, Silicon, Meta
IXFX170N20P IXYS

获取价格

Polar Power MOSFET HiperFET
IXFX170N20P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFX170N20T IXYS

获取价格

GigaMOS Power MOSFET
IXFX170N20T LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低
IXFX1806 IXYS

获取价格

Power Field-Effect Transistor, 53A I(D), 500V, 0.09ohm, 1-Element, N-Channel, Silicon, Met
IXFX180N07 IXYS

获取价格

HiPerFET Power MOSFETs
IXFX180N07 LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFX180N085 IXYS

获取价格

HiPerFET Power MOSFETs
IXFX180N10 IXYS

获取价格

Single MOSFET Die