Datasheet > IXFX140N30P

IXFX140N30P

更新时间： 2024-11-06 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	170K
描述
功能与特色: 优点: 应用:

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXFX140N30P 数据手册

Polar^TMPower MOSFET

HiPerFET^TM

IXFK140N30P

IXFX140N30P

V_DSS= 300V

I_D25= 140A

R_DS(on)≤ 24mΩ

t_rr

≤ 200ns

N-Channel Enhancement Mode

Avalanche Rated

TO-264 (IXFK)

Fast Intrisic Diode

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

300

(TAB)

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

PLUS247 (IXFX)

I_D25

I_LRMS

I_DM

T_C= 25°C

Lead Current Limit, RMS

T_C= 25°C, pulse width limited by T_JM

140

300

(TAB)

I_A

T_C= 25°C

G = Gate

S = Source

= Drain

E_AS

TAB = Drain

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

1040

Features

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

• Fast intrinsic diode

• Avalanche Rated

• Low R_DS(ON)and Q_G

• Low package inductance

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

Advantages

M_d

Mounting force

Mounting torque

(PLUS247)

(TO-264)

20..120/4.5..27

N/lb.

Nm/lb.in.

1.13/10

Easy to mount

Space savings

Weight

PLUS247

TO-264

High power density

Applications

• DC-DC coverters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25°C, unless otherwise specified)

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±20V, V_DS= 0V

300

3.0

• DC choppers

• AC and DC motor control

• Uninterrupted power supplies

• High speed power switching

applications

5.0

±200 nA

I_DSS

V_DS= V_DSS

V_GS= 0V

25 μA

1 mA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

24 mΩ

DS99557F(5/08)

12 3 4 5 6

中文翻译

下载PDF

与IXFX140N30P相关器件

型号	品牌	获取价格	描述	数据表
IXFX14N100	IXYS	获取价格	HiPerFET Power MOSFETs
IXFX150N15	IXYS	获取价格	HiPerFET Power MOSFETs
IXFX150N15	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFX150N30P3	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXFX150N30P3	IXYS	获取价格	Power Field-Effect Transistor,
IXFX15N100	IXYS	获取价格	HiPerFET Power MOSFETs
IXFX160N30T	IXYS	获取价格	GigaMOS Power MOSFET
IXFX160N30T	LITTELFUSE	获取价格	沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低
IXFX16N90	IXYS	获取价格	HiPerFET Power MOSFETs
IXFX16N90Q	IXYS	获取价格	Power Field-Effect Transistor, 16A I(D), 900V, 0.6ohm, 1-Element, N-Channel, Silicon, Meta