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IXFX120N30T PDF预览

IXFX120N30T

更新时间: 2024-11-06 14:56:11
品牌 Logo 应用领域
力特 - LITTELFUSE
页数 文件大小 规格书
6页 167K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低的功率耗损。 再结合广泛的工作结温范围(从-40 °C到175 °C),这些产品非常适合汽车应用以及其他处

IXFX120N30T 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.72
Base Number Matches:1

IXFX120N30T 数据手册

 浏览型号IXFX120N30T的Datasheet PDF文件第2页浏览型号IXFX120N30T的Datasheet PDF文件第3页浏览型号IXFX120N30T的Datasheet PDF文件第4页浏览型号IXFX120N30T的Datasheet PDF文件第5页浏览型号IXFX120N30T的Datasheet PDF文件第6页 
Advance Technical Information  
GigaMOSTM  
Power MOSFET  
VDSS = 300V  
ID25 = 120A  
RDS(on) 24mΩ  
IXFK120N30T  
IXFX120N30T  
trr  
200ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-264 (IXFK)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
300  
300  
V
V
G
D
S
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
PLUS247 (IXFX)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
120  
330  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
30  
2.5  
A
J
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
20  
V/ns  
W
(TAB)  
960  
G = Gate  
S = Source  
D
= Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TAB = Drain  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
z International Standard Packages  
z High Current Handling Capability  
z Fast Intrinsic Diode  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z Avalanche Rated  
z
Low RDS(on)  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 4mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
300  
V
V
Applications  
2.5  
5.0  
z DC-DC Converters  
z Battery Chargers  
± 200 nA  
z Switched-Mode and Resonant-Mode  
Power Supplies  
IDSS  
50 µA  
3 mA  
TJ = 125°C  
z DC Choppers  
z AC Motor Drives  
RDS(on)  
VGS = 10V, ID = 60A, Note 1  
24 mΩ  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
DS100132(03/09)  
© 2009 IXYS CORPORATION, All rights reserved  

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