Datasheet > IXFV26N50PS

IXFV26N50PS

更新时间： 2024-11-17 23:13:27

品牌	Logo	应用领域
IXYS		二极管
页数	文件大小	规格书
5页	211K
描述
Avalanche Rated Fast Instrinsic Diode

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中文翻译

获取价格

数据手册
替代型号

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IXFV26N50PS 数据手册

PolarHV^TM

Power MOSFET

IXFH 26N50P

IXFV 26N50P

IXFV 26N50PS

V_DSS= 500 V

I_D2526 A

R_DS(on)≤ 230 mΩ

t_rr≤ 200 ns

Avalanche Rated

Fast Instrinsic Diode

PreliminaryDataSheet

Symbol

TestConditions

Maximum Ratings

TO-247 (IXFH)

V_DSS

V_DGR

T_J= 25°C to 150°C

500

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GSS

V_GSM

Continuos

Transient

D (TAB)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

I_AR

T_C= 25°C

PLUS220 (IXFV)

E_AR

E_AS

1.0

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 4 Ω

V/ns

D (TAB)

P_D

T_C= 25°C

400

PLUS220SMD (IXFV_S)

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

1.6 mm (0.062 in.) from case for 10 s

Plastic body

300

260

°C

D (TAB)

M_d

Mounting torque

Mounting force

TO-3P

(TO-247)

1.13/10 Nm/lb.in.

F_C

(PLUS220SMD)

11..65/2.5..15

N/lb

G = Gate

S = Source

D = Drain

TAB = Drain

Weight

PLUS220 & PLUS220SMD

Features

^zInternational standard packages

^zFast intrinsic diode

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

^zUnclamped Inductive Switching (UIS)

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 4 mA

V_GS= 30 V_DC, V_DS= 0

500

rated

^zLow package inductance

- easy to drive and to protect

3.0

5.0

100

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

µA

Easy to mount

T_J= 125°C

250

Space savings

High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

230 mΩ

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

DS99276A(09/05)

12 3 4 5

中文翻译

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IXFV26N50PS 替代型号

型号	品牌	替代类型	描述	数据表
IXTT26N50P	IXYS	功能相似	Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Met
IXFH26N55Q	IXYS	功能相似	HiPerFET Power MOSFETs Q-Class

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