Datasheet > IXFH26N55Q

IXFH26N55Q

更新时间： 2024-11-18 11:13:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	125K
描述
HiPerFET Power MOSFETs Q-Class

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中文翻译

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数据手册
替代型号

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IXFH26N55Q 数据手册

Advanced Technical Information

HiPerFET^TM

Power MOSFETs

Q-Class

IXFH 26N55Q

IXFT 26N55Q

V_DSS

I_D25

= 550 V

= 26 A

R_DS(on)= 0.23 Ω

t_rr≤ 250 ns

N-ChannelEnhancementMode

Avalanche Rated, Low Q_g, High dv/dt

Symbol

TestConditions

Maximum Ratings

TO-247AD(IXFH)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

550

V_GS

V_GSM

Continuous

Transient

±30

±40

(TAB)

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

104

TO-268 (D3) ( IXFT)

E_AR

E_AS

T_C= 25°C

2.0

(TAB)

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

G = Gate

= Drain

P_D

T_C= 25°C

375

S = Source TAB = Drain

T_J

T_JM

T_stg

-55 to +150

150

-55 to +150

°C

T_L

1.6 mm (0.063 in) from case for 10 s

Mounting torque

300

°C

Features

M_d

1.13/10 Nm/lb.in.

^zIXYS advanced low Q_gprocess

^zLow gate charge and capacitances

- easier to drive

Weight

TO-247

TO-268

- faster switching

^zInternational standard packages

^zLow R_{DS (on)}

Symbol

TestConditions

Characteristic Values

^zRated for unclamped Inductive load

switching (UIS) rated

(T_J= 25°C, unless otherwise specified)

min.

typ.

max.

^zMolding epoxies meet UL 94 V-0

flammability classification

V_DSS

V_GS(th)

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 4 mA

550

2.5

4.5

I_GSS

I_DSS

V_GS= ±30 V_DC, V_DS= 0

±100

Advantages

V_DS= V

= 25°C

µA

V_GS= 0^DV^SS

T_J^J= 125°C

Easy to mount

Space savings

R_DS(on)

= 10 V, I_D= 0.5 I_D25

0.23

Ω

P^Gu^Slse test, t ≤ 300 µs, duty cycle d ≤ 2 %

High power density

DS99001(01/03)

中文翻译

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IXFH26N55Q 替代型号

型号	品牌	替代类型	描述	数据表
IXTT26N50P	IXYS	功能相似	Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Met
IXFV26N50PS	IXYS	功能相似	Avalanche Rated Fast Instrinsic Diode

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