Datasheet > IXFH26N60Q

IXFH26N60Q

更新时间： 2024-09-30 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
3页	186K
描述
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中文翻译

获取价格

数据手册

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IXFH26N60Q 数据手册

HiPerFET^TM

Power MOSFETs

Q-Class

IXFH 26N60Q V

IXFT 26N60Q I

= 600 V

26 A

= 0.25 Ω

DSS

D25

DS(on)

t ≤ 250 ns

N-ChannelEnhancementMode

AvalancheRated, Highdv/dt, LowQ

Symbol

TestConditions

Maximum Ratings

TO-247 AD (IXFH)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

600

(TAB)

V_GS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

104

TO-268 (D3) ( IXFT)

E_AR

E_AS

T_C= 25°C

1.5

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

(TAB)

P_D

T_C= 25°C

360

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate

S = Source

D = Drain

TAB = Drain

T_L

1.6 mm (0.063 in) from case for 10 s

300

°C

Features

M_d

Mountingtorque

TO-247

1.13/10 Nm/lb.in.

Low gate charge

Weight

TO-247

TO-268

International standard packages

Epoxy meet UL 94 V-0, flammability

classification

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Avalanche energy and current rated

Fast intrinsic Rectifier

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Advantages

V_DSS

V_GS= 0 V, I_D= 250µA

600

2.5

V_GS(th)

V_DS= V_GS, I_D= 4 mA

4.5

Easy to mount

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

25 µA

Space savings

High power density

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

0.25

Ω

98635D (6/02)

12 3

中文翻译

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