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IXFH30N50 PDF预览

IXFH30N50

更新时间: 2024-11-04 22:07:55
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IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 113K
描述
HiPerFET Power MOSFETs

IXFH30N50 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.7Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):30 A
最大漏极电流 (ID):30 A最大漏源导通电阻:0.16 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):360 W最大脉冲漏极电流 (IDM):120 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFH30N50 数据手册

 浏览型号IXFH30N50的Datasheet PDF文件第2页浏览型号IXFH30N50的Datasheet PDF文件第3页浏览型号IXFH30N50的Datasheet PDF文件第4页 
HiPerFETTM  
Power MOSFETs  
VDSS  
ID25  
RDS(on)  
IXFH/IXFT 30N50  
IXFH/IXFT 32N50  
500V  
500V  
30 A 0.16 W  
32 A 0.15 W  
N-Channel Enhancement Mode  
High dv/dt, Low trr, HDMOSTM Family  
trr £ 250 ns  
TO-247 AD (IXFH)  
Symbol  
TestConditions  
MaximumRatings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
500  
500  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
V
V
±30  
D (TAB)  
ID25  
IDM  
IAR  
TC = 25°C  
30N50  
32N50  
30N50  
32N50  
30N50  
32N50  
30  
32  
120  
128  
30  
A
A
A
A
A
A
TC = 25°C  
pulse width limited by TJM  
TC = 25°C  
TO-268 (D3) Case Style  
32  
EAS  
TC = 25°C  
ID = 25°C  
1.5  
45  
5
J
mJ  
G
S
(TAB)  
EAR  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
,
V/ns  
TJ £ 150°C, RG = 2 W  
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
PD  
TC = 25°C  
360  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
Internationalstandardpackages  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mountingtorque  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
Weight  
6
g
Low package inductance  
- easy to drive and to protect  
Fast intrinsic Diode  
Symbol  
VDSS  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ.  
max.  
Applications  
DC-DC converters  
VGS = 0 V, ID = 1 mA  
500  
V
Battery chargers  
VDSS temperature coefficient  
0.102  
%/K  
Switched-modeandresonant-mode  
powersupplies  
DC choppers  
VGS(th) VDS = VGS, ID = 4 mA  
VGS(th) temperature coefficient  
2
4
V
-0.206  
%/K  
AC motor control  
Temperatureandlightingcontrols  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100  
nA  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
mA  
mA  
Advantages  
1
Easy to mount with 1 screw (TO-247)  
(isolatedmountingscrewhole)  
Space savings  
RDS(on) VGS = 10 V, ID = 15A  
32N50  
30N50  
0.15  
0.16  
W
W
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
High power density  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
97518H(6/99)  
1 - 4  

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