IXFH28N50

更新时间： 2024-11-15 22:24:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	106K
描述
HiPerRF Power MOSFETs F-Class: MegaHertz Switching

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXFH28N50 数据手册

Advance Technical Information

HiPerRF^TM

Power MOSFETs

F-Class: MegaHertz Switching

IXFH 28N50F V_DSS

IXFT 28N50F I_D25

= 500V

= 28A

R_DS(on)= 190mΩ

t ≤ 250 ns

N-ChannelEnhancementMode

Avalanche Rated, Low Q_g, Low Intrinsic R_g

High dV/dt, Low t_rr

TO-247AD(IXFH)

Symbol

TestConditions

Maximum Ratings

(TAB)

V_DSS

V_DGR

= 25°C to 150°C

= 25°C to 150°C; R = 1 MΩ

500

V_GS

V_GSM

Continuous

Transient

±20

±30

TO-268 (IXFT) Case Style

I_D25

I_DM

I_AR

= 25°C

112

= 25°C, pulse width limited by T

= 25°C

(TAB)

E_AR

E_AS

= 25°C

1.5

Gate,D

Source,TAB

Drain,

Drain

dv/dt

≤ I , di/dt ≤ 100 A/µs, V ≤ V

V/ns

DSS

≤ 150°C, R = 2 Ω

P_D

T_J

= 25°C

315

Features

RF capable MOSFETs

-55 ... +150

°C

Double metal process for low gate

resistance

UnclampedInductiveSwitching(UIS)

rated

T_JM

T_stg

150

-55 ... +150

°C

T_L

1.6 mm (0.063 in.) from case for 10 s

300

°C

M_d

Mountingtorque

TO-247

1.13/10 Nm/lb.in.

Low package inductance

- easy to drive and to protect

Fast intrinsic rectifier

Weight

TO-247

TO-268

Applications

DC-DC converters

Switched-mode and resonant-mode

power supplies, >500kHz switching

Symbol

V_DSS

TestConditions

Characteristic Values

(T = 25°C, unless otherwise specified)

DC choppers

min. typ. max.

13.5 MHz industrial applications

V_GS= 0 V, I_D= 1mA

V_DS= V_GS, I_D= 4mA

500

2.0

Pulse generation

V_GS(th)

I_GSS

4.0

Laser drivers

RF amplifiers

= ±20 V, V = 0

±100 nA

Advantages

Space savings

I_DSS

= V

= 0 V

50 µA

1.5 mA

DSS

= 125°C

High power density

R_DS(on)

Note 1

= 10 V, I = 0.5 I

190 mΩ

D25

98883 (1/02)

中文翻译

下载PDF

与IXFH28N50相关器件

型号	品牌	获取价格	描述	数据表
IXFH28N50F	IXYS	获取价格	HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFH28N50Q	IXYS	获取价格	HiPerFET Power MOSFETs Q-Class
IXFH28N60P3	IXYS	获取价格	Polar3 HiperFET Power MOSFETs
IXFH28N60P3	LITTELFUSE	获取价格	PolarP3? HiPerFET?产品系列是针对300V, 500V至600V产品系列的
IXFH30N40Q	IXYS	获取价格	HiPerFET Power MOSFETs Q-Class
IXFH30N50	IXYS	获取价格	HiPerFET Power MOSFETs
IXFH30N50P	IXYS	获取价格	PolarHV HiPerFET Power MOSFET
IXFH30N50P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFH30N50Q	IXYS	获取价格	Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
IXFH30N50Q3	IXYS	获取价格	HiperFETTM Power MOSFETs Q3-Class