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IXFV20N80P PDF预览

IXFV20N80P

更新时间: 2024-11-05 11:14:07
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页数 文件大小 规格书
5页 325K
描述
PolarHV HiPerFET Power MOSFET

IXFV20N80P 数据手册

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PolarHVTMHiPerFET  
Power MOSFET  
N-Channel Enhancement Mode  
Avalanche Rated  
IXFH 20N80P  
IXFT 20N80P  
IXFV 20N80P  
IXFV 20N80PS  
VDSS = 800 V  
ID25 = 20 A  
RDS(on) 520 mΩ  
trr  
250 ns  
Fast Intrinsic Diode  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 (IXFH)  
VDSS  
VDGR  
TJ = 25° C to 150° C  
800  
800  
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
TO-268 (IXFT)  
ID25  
IDM  
TC = 25° C  
20  
50  
A
A
TC = 25° C, pulse width limited by TJM  
IAR  
TC = 25° C  
10  
A
G
S
EAR  
EAS  
TC = 25° C  
TC = 25° C  
30  
mJ  
J
D (TAB)  
1.0  
PLUS220 (IXFV)  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
,
10  
V/ns  
TC = 25° C  
500  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
D (TAB)  
D
S
PLUS220 SMD(IXFV..S)  
TL  
TSOLD  
Maximum lead temperature for soldering  
Plastic case for 10 s  
300  
260  
°C  
°C  
Md  
Mounting torque (TO-247)  
1.13/10 Nm/lb.in.  
G
S
FC  
Mounting force (PLUS220)  
1..65 / 2.5..15  
N/lb  
D (TAB)  
Weight  
TO-247  
TO-268  
PLUS220 types  
6
5.5  
4
g
g
g
G = Gate  
D
= Drain  
S = Source Tab = Drain  
Features  
l
Symbol  
TestConditions  
Characteristic Values  
International standard packages  
Fast recovery diode  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
l
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
800  
V
V
l
VDS = VGS, ID = 4 mA  
3.0  
5.0  
200  
25  
VGS  
=
30 VDC, VDS = 0  
nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
µA  
µA  
l
Easy to mount  
Space savings  
High power density  
TJ = 125° C  
1000  
l
RDS(on)  
VGS = 10 V, ID = 10 A  
Pulse test, t 300 µs, duty cycle d 2 %  
520 m Ω  
l
DS99511E(03/06)  
© 2006 IXYS All rights reserved  

IXFV20N80P 替代型号

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