Datasheet > IXFV20N80P

IXFV20N80P

更新时间： 2024-11-18 11:14:07

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	325K
描述
PolarHV HiPerFET Power MOSFET

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中文翻译

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数据手册
替代型号

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IXFV20N80P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXFH 20N80P

IXFT 20N80P

IXFV 20N80P

IXFV 20N80PS

V_DSS= 800 V

I_D25= 20 A

R_DS(on)≤ 520 mΩ

t_rr

≤ 250 ns

Fast Intrinsic Diode

Symbol

TestConditions

Maximum Ratings

TO-247 (IXFH)

V_DSS

V_DGR

T_J= 25° C to 150° C

800

T_J= 25° C to 150° C; R_GS= 1 MΩ

(TAB)

V_GSS

V_GSM

Continuous

Transient

TO-268 (IXFT)

I_D25

I_DM

T_C= 25° C

T_C= 25° C, pulse width limited by T_JM

I_AR

T_C= 25° C

E_AR

E_AS

T_C= 25° C

D (TAB)

1.0

PLUS220 (IXFV)

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 4 Ω

V/ns

T_C= 25° C

500

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

D (TAB)

PLUS220 SMD(IXFV..S)

T_L

T_SOLD

Maximum lead temperature for soldering

Plastic case for 10 s

300

260

°C

M_d

Mounting torque (TO-247)

1.13/10 Nm/lb.in.

F_C

Mounting force (PLUS220)

1..65 / 2.5..15

N/lb

D (TAB)

Weight

TO-247

TO-268

PLUS220 types

5.5

G = Gate

= Drain

S = Source Tab = Drain

Features

Symbol

TestConditions

Characteristic Values

International standard packages

Fast recovery diode

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

(T_J= 25° C, unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

800

V_DS= V_GS, I_D= 4 mA

3.0

5.0

200

V_GS

30 V_DC, V_DS= 0

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

µA

Easy to mount

Space savings

High power density

T_J= 125° C

1000

R_DS(on)

V_GS= 10 V, I_D= 10 A

Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

520 m Ω

DS99511E(03/06)

12 3 4 5

中文翻译

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IXFV20N80P 替代型号

型号	品牌	替代类型	描述	数据表
IXFT20N80P	IXYS	类似代替	PolarHV HiPerFET Power MOSFET
IXFH20N80P	IXYS	类似代替	PolarHV HiPerFET Power MOSFET
IXFV20N80PS	IXYS	功能相似	PolarHV HiPerFET Power MOSFET

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