Datasheet > 晶体管 > 功率场效应晶体管> IXFV12N120PS

IXFV12N120PS

更新时间： 2024-11-05 11:14:07

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	173K
描述
Polar Power MOSFET HiPerFET

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中文翻译

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数据手册

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IXFV12N120PS 数据手册

Polar^TMPower MOSFET

HiPerFET^TM

IXFH12N120P

IXFV12N120P

IXFV12N120PS

V_DSS= 1200V

I_D25= 12A

R_DS(on)≤ 1.35Ω

≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated

t_rr

PLUS220 (IXFV)

Fast Intrinsic Diode

Symbol

V_DSS

Test Conditions

Maximum Ratings

D (TAB)

T_J= 25°C to 150°C

1200

PLUS220SMD (IXFV_S)

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

I_D25

I_DM

T_C= 25°C

D (TAB)

T_C= 25°C, pulse width limited by T_JM

TO-247 (IXFH)

I_A

T_C= 25°C

E_AS

500

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

D (TAB)

543

T_J

-55 ... +150

150

°C

G = Gate

S = Source TAB = Drain

= Drain

T_JM

T_stg

-55 ... +150

Features

^zInternational standard packages

^zFast recovery diode

T_L

Maximum lead temperature for soldering

Plastic body for 10s

300

260

°C

T_SOLD

^zUnclamped Inductive Switching (UIS)

rated

M_d

Mounting torque (TO-247)

Mounting force (PLUS 220)

1.13/10

Nm/lb.in.

N/lb.

^zLow package inductance

- easy to drive and to protect

F_C

11..65 / 2.5..14.6

Weight

TO-247

PLUS 220 types

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

1200

3.5

Typ.

Max.

Applications:

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 1mA

V_GS= ± 30V, V_DS= 0V

^zHigh Voltage Switched-mode and

resonant-mode power supplies

^zHigh Voltage Pulse Power Applications

^zHigh Voltage Discharge circuits in

Lasers Pulsers, Spark Igniters, RF

Generators

6.5

± 100 nA

I_DSS

V_DS= V_DSS

V_GS= 0V

25 μA

2 mA

T_J= 125°C

^zHigh Voltage DC-DC converters

^zHigh Voltage DC-AC inverters

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

1.15

1.35

DS99894A (04/08)

12 3 4

中文翻译

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