Datasheet > 晶体管 > 功率场效应晶体管> IXFV12N100PS

IXFV12N100PS

更新时间： 2024-11-18 11:14:07

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	174K
描述
Polar HiPerFET Power MOSFETs

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中文翻译

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数据手册

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IXFV12N100PS 数据手册

Polar^TMHiPerFET^TM

Power MOSFETs

IXFH12N100P

IXFV12N100P

IXFV12N100PS

V_DSS= 1000V

I_D25= 12A

R_DS(on)≤ 1.05Ω

≤ 300ns

t_rr

N-Channel Enhancement Mode

Avalanche Rated

PLUS220 (IXFV)

Fast Intrinsic Rectifier

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

PLUS220SMD (IXFV_S)

T_J= 25°C to 150°C

1000

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

D (Tab)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

TO-247 (IXFH)

I_AR

T_C= 25°C

E_AS

750

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

D (Tab)

463

T_J

-55 ... +150

150

°C

G = Gate

= Drain

T_JM

T_stg

S = Source

Tab = Drain

-55 ... +150

T_L

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Features

T_SOLD

M_d

Mounting Torque (TO-247)

Mounting Force (PLUS220)

1.13/10

Nm/lb.in.

N/lb.

Low R_DS(on)and Q_G

Avalanche Rated

Low Package Inductance

Fast Intrinsic Rectifier

F_C

11..65/2.5..14.6

Weight

TO-247

PLUS220 types

Advantages

High Power Density

Easy to Mount

Space Savings

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1000

3.5

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 1mA

V_GS= ± 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

6.5

Applications

± 100 nA

Switch-Mode and Resonant-Mode

I_DSS

20 μA

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

T_J= 125°C

1.0 mA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

1.05

Robotics and Servo Controls

DS99920B(03/11)

12 3 4

中文翻译

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