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IXGP30N60C3 PDF预览

IXGP30N60C3

更新时间: 2024-11-05 11:14:11
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
6页 269K
描述
GenX3 600V IGBT

IXGP30N60C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:PLASTIC, TO-220, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:8.59
外壳连接:COLLECTOR最大集电极电流 (IC):60 A
集电极-发射极最大电压:600 V配置:SINGLE
门极发射器阈值电压最大值:5.5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):220 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):160 ns
标称接通时间 (ton):45 ns

IXGP30N60C3 数据手册

 浏览型号IXGP30N60C3的Datasheet PDF文件第2页浏览型号IXGP30N60C3的Datasheet PDF文件第3页浏览型号IXGP30N60C3的Datasheet PDF文件第4页浏览型号IXGP30N60C3的Datasheet PDF文件第5页浏览型号IXGP30N60C3的Datasheet PDF文件第6页 
GenX3TM 600V IGBT  
IXGA30N60C3  
IXGP30N60C3  
IXGH30N60C3  
VCES = 600V  
IC110 = 30A  
VCE(sat) 3.0V  
tfi(typ) = 47ns  
High Speed PT IGBTs for  
40-100kHz switching  
TO-263(IXGA)  
G
Symbol Test Conditions  
Maximum Ratings  
E
C(TAB)  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
TO-220(IXGP)  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
ICM  
TC = 25°C  
60  
30  
A
A
A
G
TC = 110°C  
C
E
TC = 25°C, 1ms  
150  
SSOA  
V
GE = 15V, TVJ = 125°C, RG = 5Ω  
ICM = 60  
A
TO-247(IXGH)  
(RBSOA)  
Clamped inductive load @ 600V  
PC  
TC = 25°C  
220  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G
C(TAB)  
C
-55 ... +150  
E
TL  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
G = Gate  
E = Emitter  
C
= Collector  
TSOLD  
TAB = Collector  
Md  
Mounting torque (TO-220 & TO-247)  
1.13/10  
Nm/lb.in.  
Features  
Weight  
TO-220  
TO-263  
TO-263  
2.5  
3.0  
3.0  
g
g
g
Optimized for low switching losses  
SquareRBSOA  
International standard packages  
Advantages  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
600  
3.5  
Typ.  
Max.  
High power density  
Low gate drive requirement  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
V
V
5.5  
Applications  
VCE = VCES  
VGE = 0V  
15 μA  
300 μA  
High Frequency Power Inverters  
UPS  
TJ = 125°C  
TJ = 125°C  
MotorDrives  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
SMPS  
VCE(sat)  
IC = 20A, VGE = 15V, Note 1  
2.6  
1.8  
3.0  
V
V
PFCCircuits  
BatteryChargers  
WeldingMachines  
LampBallasts  
© 2008 IXYS CORPORATION, All rights reserved  
DS100012A(11/08)  

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